TVS3300 Datasheet by Texas Instruments

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TVS3300
SLVSDO2C FEBRUARY 2017REVISED FEBRUARY 2018
TVS3300 33-V Flat-Clamp Surge Protection Device
1
1 Features
1 Protection Against 1 kV, 42 ΩIEC 61000-4-5
Surge Test for Industrial Signal Lines
Max Clamping Voltage of 40 V at 35 A of 8/20 µs
Surge Current
Standoff Voltage: 33 V
Tiny 1.1 mm2WCSP and 4 mm2SON Footprints
Survives Over 4,000 Repetitive Strikes of 30 A
8/20 µs Surge Current at 125°C
Robust Surge Protection
IEC61000-4-5 (8/20 µs): 35 A
IEC61643-321 (10/1000 µs): 4 A
Low Leakage Current
19 nA Typical at 27°C
28 nA Typical at 85°C
Low Capacitance: 130 pF
Integrated Level 4 IEC 61000-4-2 ESD Protection
2 Applications
Industrial Sensors
PLC I/O Modules
24 V Power Lines or Digital Switching Lines
4/20 mA Loops
• Appliances
Medical Equipment
Motor Drivers
3 Description
The TVS3300 robustly shunts up to 35 A of IEC
61000-4-5 fault current to protect systems from high
power transients or lightning strikes. The device
offers a solution to the common industrial signal line
EMC requirement to survive up to 1 kV IEC 61000-4-
5 open circuit voltage coupled through a 42 Ω
impedance. The TVS3300 uses a unique feedback
mechanism to ensure precise flat clamping during a
fault, assuring system exposure below 40 V. The tight
voltage regulation allows designers to confidently
select system components with a lower voltage
tolerance, lowering system costs and complexity
without sacrificing robustness.
In addition, the TVS3300 is available in small 1 mm ×
1.1 mm WCSP and 2 mm × 2 mm SON footprints
which are ideal for space constrained applications,
offering up to a 90 percent reduction in size
compared to industry standard SMA and SMB
packages. The extremely low device leakage and
capacitance ensure a minimal effect on the protected
line. To ensure robust protection over the lifetime of
the product, TI tests the TVS3300 against 4000
repetitive surge strikes at high temperature with no
shift in device performance.
The TVS3300 is part of TI's Flat-Clamp family of
surge devices. For more information on the other
devices in the family, see the Device Comparison
Table
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
TVS3300 WCSP (4) 1.062 mm × 1.116 mm
SON (6) 2.00 mm × 2.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Footprint Comparison Voltage Clamp Response to 8/20 µs Surge Event
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Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Device Comparison Table..................................... 3
6 Pin Configuration and Functions......................... 4
7 Specifications......................................................... 5
7.1 Absolute Maximum Ratings ...................................... 5
7.2 ESD Ratings - JEDEC .............................................. 5
7.3 ESD Ratings - IEC .................................................... 5
7.4 Recommended Operating Conditions....................... 5
7.5 Thermal Information.................................................. 5
7.6 Electrical Characteristics........................................... 6
7.7 Typical Characteristics.............................................. 7
8 Detailed Description.............................................. 9
8.1 Overview ................................................................... 9
8.2 Functional Block Diagram......................................... 9
8.3 Feature Description................................................... 9
8.4 Reliability Testing...................................................... 9
8.5 Device Functional Modes ......................................... 9
9 Application and Implementation ........................ 11
9.1 Application Information............................................ 11
9.2 Typical Application ................................................. 11
10 Power Supply Recommendations ..................... 12
11 Layout................................................................... 13
11.1 Layout Guidelines ................................................. 13
11.2 Layout Example .................................................... 13
12 Device and Documentation Support ................. 15
12.1 Documentation Support ........................................ 15
12.2 Receiving Notification of Documentation Updates 15
12.3 Community Resources.......................................... 15
12.4 Trademarks........................................................... 15
12.5 Electrostatic Discharge Caution............................ 15
12.6 Glossary................................................................ 15
13 Mechanical, Packaging, and Orderable
Information ........................................................... 15
4 Revision History
Changes from Revision B (April 2017) to Revision C Page
Data Sheet revised to match other TVSxx00 family devices ................................................................................................. 1
Changes from Revision A (March 2017) to Revision B Page
Updated standard for (10/1000 μs) from IEC 61000-4-5 to IEC 61643-321 in the Absolute Maximum Ratings table .......... 5
Changes from Original (Feb 2017) to Revision A Page
Added SON package option .................................................................................................................................................. 1
Added ±11-kV Contact Discharge (SON) to the Features section......................................................................................... 1
Added Peak pulse—clamping direction specs for SON package in the Absolute Maximum Ratings table........................... 5
Added IEC 61000-4-2 contact discharge spec for SON package in the ESD Ratings - IEC table ....................................... 5
Added TA= 27°C condition to dynamic resistance in the Electrical Characteristics table ..................................................... 5
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5 Device Comparison Table
Device Vrwm Vclamp at Ipp Ipp (8/20 µs) Vrwm leakage
(nA) Package Options Polarity
TVS0500 5 9.2 43 0.07 SON Unidirectional
TVS1400 14 18.4 43 2 SON Unidirectional
TVS1800 18 22.8 40 0.5 SON Unidirectional
TVS2200 22 27.7 40 3.2 SON Unidirectional
TVS2700 27 32.5 40 1.7 SON Unidirectional
TVS3300 33 38 35 19 WCSP, SON Unidirectional
‘5‘ TEXAS INSTRUMENTS
IN
IN
GND
GND
GND IN
GND
2
3
1
5
4
6
IN
GND
IN
GND
B
A
1 2
4
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6 Pin Configuration and Functions
YZF Package
4-Pin WCSP
Top View
DRV Package
6-Pin SON
Top View
Pin Functions
PIN TYPE DESCRIPTION
NAME YZF DRV
IN B1, B2 4, 5, 6 I ESD and surge protected channel
GND A1, A2 1, 2, 3, exposed
thermal pad GND Ground
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(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7 Specifications
7.1 Absolute Maximum Ratings
TA= 27(unless otherwise noted)(1)
MIN MAX UNIT
Maximum
Surge
IEC 61000-4-5 Current (8/20 µs) 35 A
IEC 61000-4-5 Power (8/20 µs) 1330 W
IEC 61643-321 Current (10/1000 µs) - WCSP 4 A
IEC 61643-321 Power (10/1000 µs) - WCSP 150 W
IEC 61643-321 Current (10/1000 µs) - DRV 3.5 A
IEC 61643-321 Power (10/1000 µs) - DRV 125 W
Maximum
Forward Surge
IEC 61000-4-5 Current (8/20 µs) 50 A
IEC 61000-4-5 Power (8/20 µs) 80 W
IEC 61643-321 Current (10/1000 µs) 23 A
IEC 61643-321 Power (10/1000 µs) 60 W
EFT IEC 61000-4-4 EFT Protection 80 A
IBR DC Breakdown Current - DRV 10 mA
IFDC Forward Current 500 mA
TAAmbient Operating Temperature -40 125 °C
Tstg Storage Temperature -65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings - JEDEC
VALUE UNIT
V(ESD) Electrostatic discharge
Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000
V
Charged device model (CDM), per JEDEC
specification JESD22-C101, all pins(2) ±500
7.3 ESD Ratings - IEC
VALUE UNIT
V(ESD) Electrostatic discharge IEC 61000-4-2 contact discharge ±11 kV
IEC 61000-4-2 air-gap discharge ±30
7.4 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
PARAMETER MIN NOM MAX UNIT
VRWM Reverse Stand-off Voltage 33 V
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Thermal Information
THERMAL METRIC(1)
TVS3300
UNITYZF (WCSP) DRV (SON)
4 PINS 6 PINS
RqJA Junction-to-ambient thermal resistance 173.8 70.4 °C/W
RqJC(top) Junction-to-case (top) thermal resistance 1.7 73.7 °C/W
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Thermal Information (continued)
THERMAL METRIC(1)
TVS3300
UNITYZF (WCSP) DRV (SON)
4 PINS 6 PINS
RqJB Junction-to-board thermal resistance 47.1 40 °C/W
YJT Junction-to-top characterization parameter 9.5 2.2 °C/W
YJB Junction-to-board characterization parameter 47.1 40.3 °C/W
RqJC(bot) Junction-to-case (bottom) thermal resistance N/A 11 °C/W
7.6 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ILEAK Leakage Current Measured at VIN = VRWM, TA= 27°C 19 150 nA
Measured at VIN = VRWM, TA= 85°C 28 600 nA
VFForward Voltage IIN = 1 mA from GND to IO 0.25 0.5 0.65 V
VBR Break-down Voltage IIN = 1 mA from IO to GND 34 35.8 39 V
VFCLAMP Forward Clamp Voltage 35 A IEC 61000-4-5 Surge (8/20 µs)
from GND to IO, 27°C 1 2 5 V
VCLAMP Clamp Voltage
15 A IEC 61000-4-5 Surge (8/20 µs)
from IO to GND, VIN = 0 V before surge,
27°C 34 37 40 V
35 A IEC 61000-4-5 Surge (8/20 µs) from
IO to GND, VIN = 0 V before surge, 27°C 34 38 40 V
RDYN 8/20 µs surge dynamic resistance Calculated from VCLAMP at 15 A and 30
A surge current levels, 27°C 40 60 m
CIN Input pin capacitance VIN = 12 V, f = 1 MHz, 30 mVpp, IO to
GND 110 130 150 pF
SR Maximum Slew Rate 0-VRWM rising edge, sweep rise time and
measure slew rate when IPEAK = 1 mA,
27°C
2.5 V/µs
0-VRWM rising edge, sweep rise time and
measure slew rate when IPEAK = 1 mA,
105°C 0.7 V/µs
l TEXAS INSTRUMENTS
Temperature (°C)
Voltage (V)
-40 -20 0 20 40 60 80 100 120 140
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
D006
Temperature (qC)
Leakage Current (A)
-60 -40 -20 0 20 40 60 80 100 120
0x100
10x10-9
20x10-9
30x10-9
40x10-9
50x10-9
60x10-9
70x10-9
80x10-9
90x10-9
100x10-9
D004D004
Temperature (qC)
Capacitance (pF)
-40 -20 0 20 40 60 80 100
0
20
40
60
80
100
120
140
160
180
Fig3
Vbias = 5 V
Vbias = 12 V
Vbias = 20 V
Vbias = 25 V
Vbias = 33 V
Time (s)
Voltage (V) / Current (A)
-50x10-6 -40x10-6 -30x10-6 -20x10-6 -10x10-6
0
5
10
15
20
25
30
35
40
D001D001
Voltage
Current
Time (s)
Voltage (V)/Current (A)
0x100100x10-6 200x10-6 300x10-6 400x10-6
0
5
10
15
20
25
30
35
40
D006
Current
Voltage at -40qC
Voltage at 25qC
Voltage at 85qC
7
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7.7 Typical Characteristics
Figure 1. 8/20 µs Surge Response at 35 A Figure 2. 8/20 µs Surge Response at 35 A Across
Temperature
f = 1 MHz, 30 mVpp, IO to GND
Figure 3. Capacitance vs Temperature Across Bias Figure 4. Leakage Current vs Temperature at 33 V
Figure 5. I/V Curve Across Temperature Figure 6. Forward Voltage vs Temperature
l TEXAS INSTRUMENTS 35 mu
Slew Rate (V/Ps)
Dynamic Leakage (mA)
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3
0
10
20
30
40
50
60
70
80
90
100
D009
Leakage (-40qC)
Leakage (25qC)
Leakage (85qC)
Leakage (105qC)
Leakage (125qC)
Temperature (qC)
Ipp (A)
-40 -20 0 20 40 60 80 100 120 140
0
4
8
12
16
20
24
28
32
36
40
D016
Temperature (qC)
Voltage (V)
-60 -40 -20 0 20 40 60 80 100
33.8
34
34.2
34.4
34.6
34.8
35
Fig2
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Typical Characteristics (continued)
Figure 7. Breakdown Voltage (1 mA) vs Temperature Figure 8. Max Surge Current (8/20 µs) vs Temperature
Figure 9. Dynamic Leakage vs Signal Slew Rate across Temperature
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Voltage Level
Detection Power FET
Driver
IN
GND
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8 Detailed Description
8.1 Overview
The TVS3300 is a precision clamp with a low, flat clamping voltage during transient overvoltage events like surge
and protecting the system with zero voltage overshoot.
8.2 Functional Block Diagram
8.3 Feature Description
The TVS3300 is a precision clamp that handles 35 A of IEC 61000-4-5 8/20 µs surge pulse. The flat clamping
feature helps keep the clamping voltage very low to keep the downstream circuits from being stressed. The flat
clamping feature can also help end-equipment designers save cost by opening up the possibility to use lower-
cost, lower voltage tolerant downstream ICs. The TVS3300 has minimal leakage under the standoff voltage of 33
V, making it an ideal candidate for applications where low leakage and power dissipation is a necessity. IEC
61000-4-2 and IEC 61000-4-4 ratings make it a robust protection solution for ESD and EFT events. Wide
ambient temperature range of –40°C to +125°C a good candidate for most applications. Compact packages
enable it to be used in small devices and save board area.
8.4 Reliability Testing
To ensure device reliability, the TVS3300 is characterized against 4000 repetitive pulses of 30 A IEC 61000-4-5
8/20 µs surge pulses at 125°C. The test is performed with less than 10 seconds between each pulse at high
temperature to simulate worst case scenarios for fault regulation. After each surge pulse, the TVS3300 clamping
voltage, breakdown voltage, and leakage are recorded to ensure that their is no variation or performance
degradation. By ensuring robust, reliable, high temperature protection, the TVS3300 enables fault protection in
applications that must withstand years of continuous operation with no performance change.
8.5 Device Functional Modes
8.5.1 Protection Specifications
The TVS3300 is specified according to both the IEC 61000-4-5 and IEC 61643-321 standards. This enables
usage in systems regardless of which standard is required in relevant product standards or best matches
measured fault conditions. The IEC 61000-4-5 standards requires protection against a pulse with a rise time of 8
µs and a half length of 20 µs, while the IEC 61643-321 standard requires protection against a much longer pulse
with a rise time of 10 µs and a half length of 1000 µs.
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Device Functional Modes (continued)
The positive and negative surges are imposed to the TVS3300 by a combinational waveform generator (CWG)
with a 2-Ωcoupling resistor at different peak voltage levels. For powered on transient tests that need power
supply bias, inductances are usually used to decouple the transient stress and protect the power supply. The
TVS3300 is post tested by assuring that there is no shift in device breakdown or leakage at Vrwm.
In addition, the TVS3300 has been tested according to IEC 61000-4-5 to pass a ±1 kV surge test through a 42-Ω
coupling resistor and a 0.5 µF capacitor. This test is a common test requirement for industrial signal I/O lines and
the TVS3300 will serve an ideal protection solution for applications with that requirement.
The TVS3300 allow integrates IEC 61000-4-2 level 4 ESD Protection and 80 A of IEC 61000-4-4 EFT Protection.
These combine to ensure that the device can protect against most transient conditions regardless of length or
type.
For more information on TI's test methods for Surge, ESD, and EFT testing, reference TI's IEC 61000-4-x
Testing Application Note
8.5.2 Minimal Derating
Unlike traditional diodes the TVS3300 has very little derating of max power dissipation and ensures robust
performance up to 125°C, shown in Figure 8. Traditional TVS diodes lose up to 50% of their current carrying
capability when at high temperatures, so a surge pulse above 85°C ambient can cause failures that are not seen
at room temperature. The TVS3300 prevents this and ensures that you will see the same level of protection
regardless of temperature.
8.5.3 Transient Performance
During large transient swings, the TVS3300 will begin clamping the input signal to protect downstream
conditions. While this prevents damage during fault conditions, it can cause leakage when the intended input
signal has a fast slew rate. In order to keep power dissipation low and remove the chance of signal distortion, it
is recommended to keep the slew rate of any input signal on the TVS3300 below 2.5 V/µs at room temperature
and below 0.7 V/µs at 125°C shown in Figure 9. Faster slew rates will cause the device to clamp the input signal
and draw current through the device for a few microseconds, increasing the rise time of the signal. This will not
cause any harm to the system or to the device, however if the fast input voltage swings occur regularly it can
cause device overheating.
l TEXAS INSTRUMENTS "nus mm 7T W R. g 2.41M ‘r
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TVS3300 can be used to protect any power, analog, or digital signal from transient fault conditions caused
by the environment or other electrical components.
9.2 Typical Application
Figure 10. TVS3300 Application Schematic
9.2.1 Design Requirements
A typical operation for the TVS3300 would be protecting an analog output module on a PLC similar to Figure 10.
In this example, the TVS3300 is protecting a 4-20 mA transmitter that uses the XTR115, a standard transmitter
that has a nominal voltage of 24 V and a maximum input voltage of 40 V. Most industrial interfaces such as this
require protection against ±1 kV surge test through a 42-Ωcoupling resistor and a 0.5 µF capacitor, equaling
roughly 24 A of surge current. Without any input protection, if a surge event is caused by lightning, coupling,
ringing, or any other fault condition this input voltage will rise to hundreds of volts for multiple microseconds,
violating the absolute maximum input voltage and harming the device. An ideal surge protection diode will
maximize the useable voltage range while still clamping at a safe level for the system, TI's Flat-Clamp technology
provides the best protection solution.
9.2.2 Detailed Design Procedure
If the TVS3300 is in place to protect the device, during a surge event the voltage will rise to the breakdown of the
diode at 35.8 V, and then the TVS3300 will turn on, shunting the surge current to ground. With the low dynamic
resistance of the TVS3300, large amounts of surge current will have minimal impact on the clamping voltage.
The dynamic resistance of the TVS3300 is around 40 mΩ, which means 24 A of surge current will cause a
voltage raise of 24 A × 40 m= 0.96 V. Because the device turns on at 35.8 V, this means the XTR115 input will
be exposed to a maximum of 35.8 V + 0.96 V = 36.76 V during surge pulses, well within the absolute maximum
input voltage. This ensures robust protection of your circuit.
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Typical Application (continued)
The small size of the device also improves fault protection by lowering the effect of fault current coupling onto
neighboring traces. The small form factor of the TVS3300 allows the device to be placed extremely close to the
input connector, lowering the length of the path fault current will take through the system compared to larger
protection solutions.
Finally, the low leakage of the TVS3300 will have low input power losses. At 33 V, the device will see typical 19
nA leakage for a constant power dissipation of less than 100 µW, a small quantity that will minimally effect
overall efficiency metrics and heating concerns.
9.2.3 PLC Surge Protection Reference Design
For a detailed description of the TVS3300 advantages in a PLC Analog Input Module, reference TI's Surge
Protection Reference Design for PLC Analog Input Module This document describes the considerations and
performance of the TVS3300 in a common industrial application.
9.2.4 Configuration Options
The TVS3300 can be used in either unidirectional or bidirectional configuration. By placing two TVS3300's in
series with reverse orientation bidirectional operation can be used, allowing a working voltage of ±33 V. TVS3300
operation in bidirectional will be similar to unidirectional operation, with a minor increase in breakdown voltage
and clamping voltage. The TVS3300 bidirectional performance has been characterized in the TVS3300
Configurations Characterization.
10 Power Supply Recommendations
The TVS3300 is a clamping device so there is no need to power it. To ensure the device functions properly do
not violate the recommended VIN voltage range (0 V to 33 V) .
l TEXAS INSTRUMENTS GND Plane Prflected Input Connector Input GND Plane
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11 Layout
11.1 Layout Guidelines
The optimum placement is close to the connector. EMI during an ESD event can couple from the trace being
struck to other nearby unprotected traces, resulting in early system failures. The PCB designer must minimize
the possibility of EMI coupling by keeping any unprotected traces away from the protected traces which are
between the TVS and the connector.
Route the protected traces straight.
Eliminate any sharp corners on the protected traces between the TVS3300 and the connector by using rounded
corners with the largest radii possible. Electric fields tend to build up on corners, increasing EMI coupling.
11.2 Layout Example
Figure 11. TVS3300 WCSP Layout
*9 TEXAS INSTRUMENTS
GND Plane
GND
GND
GND
GND
I/O
I/O
I/O
Connector
Input Protected
Input
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Layout Example (continued)
Figure 12. TVS3300 SON Layout
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
Flat-Clamp TVS Evaluation Kit
Surge Protection Reference Design for PLC Analog Input Module
TVS3300 Evaluation Module User's Guide
TVS3300DRV Evaluation Module User's Guide
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.6 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
I TEXAS INSTRUMENTS Samples Samples
PACKAGE OPTION ADDENDUM
www.ti.com 28-Sep-2021
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
TVS3300DRVR ACTIVE WSON DRV 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 17JH
TVS3300YZFR ACTIVE DSBGA YZF 4 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 125 15K
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
www.ti.com 28-Sep-2021
Addendum-Page 2
I TEXAS INSTRUMENTS REEL DIMENSIONS TAPE DIMENSIONS 7 “K0 '«m» Reel Diame|er AD Dimension deswgned to accommodate the componem wwdlh E0 Dimension desxgned to accommodate the componenl \ength KO Dimenslun deswgned to accommodate the componem thickness 7 w OveraH wwdm loe earner cape i p1 Pitch between successwe cavuy cemers f T Reel Width (W1) QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE O O O D O O D O Sprockemoles ,,,,,,,,,,, ‘ User Direcllon 0' Feed Pockel Quadrams
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TVS3300DRVR WSON DRV 6 3000 180.0 8.4 2.3 2.3 1.15 4.0 8.0 Q2
TVS3300YZFR DSBGA YZF 4 3000 180.0 8.4 1.17 1.22 0.72 2.0 8.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Feb-2018
Pack Materials-Page 1
I TEXAS INSTRUMENTS TAPE AND REEL BOX DIMENSIONS
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TVS3300DRVR WSON DRV 6 3000 210.0 185.0 35.0
TVS3300YZFR DSBGA YZF 4 3000 182.0 182.0 20.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Feb-2018
Pack Materials-Page 2
I TEXAS INSTRUMENTS
GENERIC PACKAGE VIEW
Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
DRV 6 WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
4206925/F
% W C :1 v _ W dfiN g}gfi @ DJ
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PACKAGE OUTLINE
C
6X 0.35
0.25
1.6 0.1
6X 0.3
0.2
2X
1.3
1 0.1
4X 0.65
0.8
0.7
0.05
0.00
B2.1
1.9 A
2.1
1.9
(0.2) TYP
WSON - 0.8 mm max heightDRV0006A
PLASTIC SMALL OUTLINE - NO LEAD
4222173/B 04/2018
PIN 1 INDEX AREA
SEATING PLANE
0.08 C
1
34
6
(OPTIONAL)
PIN 1 ID
0.1 C A B
0.05 C
THERMAL PAD
EXPOSED
7
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
SCALE 5.500
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EXAMPLE BOARD LAYOUT
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
(1)
4X (0.65)
(1.95)
6X (0.3)
6X (0.45)
(1.6)
(R0.05) TYP
( 0.2) VIA
TYP
(1.1)
WSON - 0.8 mm max heightDRV0006A
PLASTIC SMALL OUTLINE - NO LEAD
4222173/B 04/2018
SYMM
1
34
6
SYMM
LAND PATTERN EXAMPLE
SCALE:25X
7
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If some or all are implemented, recommended via locations are shown.
SOLDER MASK
OPENING
SOLDER MASK
METAL UNDER
SOLDER MASK
DEFINED
METAL
SOLDER MASK
OPENING
SOLDER MASK DETAILS
NON SOLDER MASK
DEFINED
(PREFERRED)
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EXAMPLE STENCIL DESIGN
6X (0.3)
6X (0.45)
4X (0.65)
(0.7)
(1)
(1.95)
(R0.05) TYP
(0.45)
WSON - 0.8 mm max heightDRV0006A
PLASTIC SMALL OUTLINE - NO LEAD
4222173/B 04/2018
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD #7
88% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:30X
SYMM
1
34
6
SYMM
METAL
7
,,,,i+i,i,
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PACKAGE OUTLINE
C
0.625 MAX
0.35
0.15
0.5
0.5
4X 0.35
0.25
B E A
D
4223221/A 08/2016
DSBGA - 0.625 mm max heightYZF0004
DIE SIZE BALL GRID ARRAY
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
SYMM
SYMM
BALL A1
CORNER
SEATING PLANE
BALL TYP 0.05 C
12
0.015 C A B
A
B
SCALE 14.000
D: Max =
E: Max =
1.146 mm, Min =
1.092 mm, Min =
1.086 mm
1.032 mm
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EXAMPLE BOARD LAYOUT
4X ( 0.245)
( 0.245)
METAL 0.05 MAX
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
( 0.245)
SOLDER MASK
OPENING
0.05 MIN
(0.5)
(0.5)
4223221/A 08/2016
DSBGA - 0.625 mm max heightYZF0004
DIE SIZE BALL GRID ARRAY
NOTES: (continued)
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
See Texas Instruments Literature No. SNVA009 (www.ti.com/lit/snva009).
SOLDER MASK DETAILS
NOT TO SCALE
12
A
B
SYMM
SYMM
LAND PATTERN EXAMPLE
SCALE:40X
NON-SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK
DEFINED
www.ti.com
EXAMPLE STENCIL DESIGN
4X ( 0.25)
(R0.05) TYP
METAL
TYP
(0.5) TYP
(0.5) TYP
4223221/A 08/2016
DSBGA - 0.625 mm max heightYZF0004
DIE SIZE BALL GRID ARRAY
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
12
A
B
SYMM
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:50X
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