NJG1159PHH Datasheet by Nisshinbo Micro Devices Inc.

NJG1159PHH Q 1 pin ind x CTL CTL Note: Specifications and description iisted in this datasheet are subiect to change without notice. ”enigma/9min 00.,M
NJG1159PHH
- 1 -
Ver.2016-04-18
GNSS Front-End Module
I
II
I GENERAL DESCRIPTION I
II
I PACKAGE OUTLINE
The NJG1159PHH is a front-end module (FEM) designed for GNSS including
GPS, GLONASS, BeiDou, and Galileo applications. This FEM offers low noise
figure, high linearity, and high out-band rejection characteristics brought by
included high performance pre-SAW filter and low noise amplifier (LNA). This
FEM can operate from 1.5V to 3.3V single voltage in -40 to 105°C. This FEM has
stand-by mode to save current consumption.
This FEM offers very small mounting area by included one SAW filter, only two
external components, and very small package HFFP10-HH that is 1.5x1.1mm.
I
II
I FEATURES
G Available for GNSS
G Low supply voltage 1.8/ 2.8V typ.
G Low current consumption 3.0/3.7mA typ. @V
DD
=1.8/ 2.8V, V
CTL
=1.8V
0.1µA typ. @V
DD
=1.8/ 2.8V, V
CTL
=0V (Stand-by mode)
G High gain 15.5/16.0dB typ. @V
DD
=1.8/ 2.8V, V
CTL
=1.8V,
f=1575MHz, 1559 to 1591MHz
G Low noise figure 1.55/1.50dB typ. @V
DD
=1.8/ 2.8V, V
CTL
=1.8V, f=1575MHz
1.70/1.65dB typ. @V
DD
=1.8/ 2.8V, V
CTL
=1.8V, f=1597 to 1606MHz
1.75/1.70dB typ. @V
DD
=1.8/ 2.8V, V
CTL
=1.8V, f=1559 to 1591MHz
G High out band rejection 55dBc typ. @f=704 to 915MHz, relative to 1575MHz
43dBc typ. @f=1710 to 1980MHz, relative to 1575MHz
51dBc typ. @f=2400 to 2500MHz, relative to 1575MHz
G Small package size HFFP10-HH: 1.5mmx1.1mm (typ.), t=0.5mm (max.)
G RoHS compliant and Halogen Free, MSL1
I
II
I PIN CONFIGURATION I
II
I BLOCK DIAGRAM
I
II
I TRUTH TABLE
“H”=V
CTL
(H), “L”=V
CTL
(L)
VCTL Mode
H Active mode
L Stand-by mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Pre-Filter
RF OUTRF IN
V
DD
V
CTL
LNA
GND
Pin Connection
1. VDD
2. VCTL
3. GND
4. PreIN
5. GND
6. PreOUT
7. LNAIN
8. LNAOUT
9. GND
10. GND
(Top View)
1 pin
i
ndex
9
10
2
1
3
6
7
8
VDD
VCTL
GND
PreOUT
LNAOUT
Pre-Filter
LNA
4
PreIN
5
GND
GND
GND
NJG1159PHH Van Van Van Van Van Van Van Van ”enigma/9min 00.,M
NJG1159PHH
- 2 -
I
II
I ABSOLUTE MAXIMUM RATINGS
T
a
=+25°C, Z
s
=Z
l
=50Ω
PARAMETERS SYMBOL CONDITIONS RATINGS UNITS
Supply voltage V
DD
5.0 V
Control voltage V
CTL
5.0 V
Input power
P
IN
(inband) V
DD
=2.8V,
f=1575, 1597 to 1606, 1559 to 1591MHz 10 dBm
P
IN
(outband) V
DD
=2.8V,
f=50 to 1460, 1710 to 4000MHz 25 dBm
Power dissipation P
D
4-layer FR4 PCB without through-hole
(101.5x114.5mm), T
j
=110°C 560 mW
Operating temperature T
opr
-40 to +105 °C
Storage temperature T
stg
-40 to +110 °C
I
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I ELECTRICAL CHARACTERISTICS 1 (DC)
(General conditions: T
a
=+25°C)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage V
DD
1.5 - 3.3 V
Control Voltage (High) V
CTL(H)
1.5 1.8 3.3 V
Control Voltage (Low) V
CTL(L)
0 0 0.3 V
Supply Current 1 I
DD1
RF OFF,
V
DD
=2.8V, V
CTL
=1.8V - 3.7 - mA
Supply Current 2 I
DD2
RF OFF,
V
DD
=1.8V, V
CTL
=1.8V - 3.0 - mA
Supply Current 3 I
DD3
RF OFF,
V
DD
=2.8V, V
CTL
=0V - 0.1 5.0 µA
Supply Current 4 I
DD4
RF OFF,
V
DD
=1.8V, V
CTL
=0V - 0.1 5.0 µA
Control Current I
CTL
V
CTL
=1.8V - 5.0 15.0 µA
NJG1159PHH ”enigma/9min 00.,M
NJG1159PHH
- 3 -
I
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I ELECTRICAL CHARACTERISTICS 2 (RF)
General conditions: V
DD
=2.8V, V
CTL
=1.8V, f
RF
=1575MHz, 1597 to 1606, 1559 to 1591MHz,
T
a
=+25°C, Z
s
=Z
l
=50
Ω
, with application circuit
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Small Signal Gain
(GPS)1 GainGPS1
f=1575MHz (GPS)
Exclude PCB, Connector Losses (0.17dB)
- 16.0 - dB
Small Signal Gain
(GLONASS)1 GainGLN1
f=1597 to 1606MHz (GLONASS)
Exclude PCB, Connector Losses (0.17dB)
- 16.5 - dB
Small Signal Gain
(BeiDou, Galileo)1 GainBG1 f=1559 to 1591MHz (BeiDou, Galileo)
Exclude PCB, Connector Losses (0.17dB)
- 16.0 - dB
Noise Figure
(GPS)1 NFGPS1 f=1575MHz (GPS)Exclude PCB,
Connector Losses (0.09dB) - 1.50 - dB
Noise Figure
(GLONASS)1 NFGLN1 f=1597 to 1606MHz (GLONASS)
Exclude PCB, Connector Losses (0.09dB)
- 1.65 - dB
Noise Figure
(BeiDou, Galileo)1 NFBG1 f=1559 to 1591MHz (BeiDou, Galileo)
Exclude PCB, Connector Losses (0.09dB)
- 1.70 - dB
Input Power at 1dB Gain
Compression Point 1 P-1dB(IN)1
f=1575,
1597 to 1606, 1559 to 1591MHz - -10.0 - dBm
Input 3rd Order
Intercept Point 1 IIP3_1
f1=1575,1597 to 1606,1559 to 1591MHz,
f2=f1 +/-1MHz,
Pin=-30dBm
- -2.0 - dBm
Out of Band
Input 2nd Order
Intercept Point 1
IIP2_OB1
f1=824.6MHz at +15dBm,
f2=2400MHz at +15dBm,
fmeas=1575.4MHz
- +80 - dBm
Out of Band
Input 3rd Order
Intercept Point 1
IIP3_OB1
f1=1712.7MHz at +15dBm,
f2=1850MHz at +15dBm,
fmeas=1575.4MHz
- +55 - dBm
700MHz Harmonic1 2fo1
Input jammer tone:
787.76MHz at +15dBm
Measure the harmonic tone
at 1575.52MHz
- -37 - dBm
Out-of-Band
Input Power 1dB
Compression 1
P-1dB(IN)
_OB1-1
fjam=900MHz,
fmeas=1575MHz
at Pin=-40dBm
- +24 - dBm
P-1dB(IN)
_OB1-2
fjam=1710MHz,
fmeas=1575MHz
at Pin=-40dBm
- +24 - dBm
Low Band Rejection 1 BR_L1 f=704 to 915MHz,
relative to 1575MHz - 55 - dBc
High Band Rejection 1 BR_H1 f=1710 to 1980MHz,
relative to 1575MHz - 43 - dBc
WLAN Band Rejection 1 BR_W1 f=2400 to 2500MHz,
relative to 1575MHz - 51 - dBc
RF IN Return Loss
(GPS)1 RLiGPS1 f=1575MHz (GPS) - 10 - dB
RF IN Return Loss
(GLONASS)1 RLiGLN1 f=1597 to 1606MHz (GLONASS) - 15 - dB
RF IN Return Loss
(BeiDou, Galileo)1 RLiBG1 f=1559 to 1591MHz (BeiDou, Galileo) - 13 - dB
RF OUT Return Loss
(GPS)1 RLoGPS1
f=1575MHz (GPS) - 15 - dB
RF OUT Return Loss
(GLONASS)1 RLoGLN1
f=1597 to 1606MHz (GLONASS) - 15 - dB
RF OUT Return Loss
(BeiDou, Galileo)1 RLoBG1 f=1559 to 1591MHz (BeiDou, Galileo) - 15 - dB
Group Delay Time Deviation
(GLONASS) 1 GDTDGLN1
f=1597 to 1606MHz (GLONASS) - 3 - ns
Group Delay Time Deviation
(BeiDou)1 GDTDB1 f=1559 to 1563.2MHz (BeiDou) - 4 - ns
Group Delay Time Deviation
(Galileo)1 GDTDG1 f=1559 to 1591MHz (Galileo) - 9 - ns
NJG1159PHH ”enigma/9min 00.,M
NJG1159PHH
- 4 -
I
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I ELECTRICAL CHARACTERISTICS 3 (RF)
General conditions: V
DD
=1.8V, V
CTL
=1.8V, f
RF
=1575MHz, 1597 to 1606, 1559 to 1591MHz,
T
a
=+25°C, Z
s
=Z
l
=50
Ω
, with application circuit
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Small Signal Gain
(GPS)2 GainGPS2
f=1575MHz (GPS)
Exclude PCB, Connector Losses (0.17dB) - 15.5 - dB
Small Signal Gain
(GLONASS)2 GainGLN2
f=1597 to 1606MHz (GLONASS)
Exclude PCB, Connector Losses (0.17dB) - 16.0 - dB
Small Signal Gain
(BeiDou, Galileo)2 GainBG2 f=1559 to 1591MHz (BeiDou, Galileo)
Exclude PCB, Connector Losses (0.17dB) - 15.5 - dB
Noise Figure
(GPS)2 NFGPS2 f=1575MHz (GPS)Exclude PCB,
Connector Losses (0.09dB) - 1.55 - dB
Noise Figure
(GLONASS)2 NFGLN2 f=1597 to 1606MHz (GLONASS)
Exclude PCB, Connector Losses (0.09dB) - 1.70 - dB
Noise Figure
(BeiDou, Galileo)2 NFBG2 f=1559 to 1591MHz (BeiDou, Galileo)
Exclude PCB, Connector Losses (0.09dB) - 1.75 - dB
Input Power at 1dB Gain
Compression Point 2 P-1dB(IN)2
f=1575,
1597 to 1606, 1559 to 1591MHz - -13.0 - dBm
Input 3rd Order
Intercept Point 2 IIP3_2
f1=1575, 1597 to 1606, 1559 to 1591MHz,
f2=f1 +/-1MHz,
Pin=-30dBm
- -5.0 - dBm
Out of Band
Input 2nd Order
Intercept Point 2
IIP2_OB2
f1=824.6MHz at +15dBm,
f2=2400MHz at +15dBm,
fmeas=1575.4MHz
- +80 - dBm
Out of Band
Input 3rd Order
Intercept Point 2
IIP3_OB2
f1=1712.7MHz at +15dBm,
f2=1850MHz at +15dBm,
fmeas=1575.4MHz
- +55 - dBm
700MHz Harmonic2 2fo2
Input jammer tone:
787.76MHz at +15dBm
Measure the harmonic tone
at 1575.52MHz
- -37 - dBm
Out-of-Band
Input Power 1dB
Compression 2
P-1dB(IN)
_OB2-1
fjam=900MHz,
fmeas=1575MHz
at Pin=-40dBm
- +24 - dBm
P-1dB(IN)
_OB2-2
fjam=1710MHz,
fmeas=1575MHz
at Pin=-40dBm
- +24 - dBm
Low Band Rejection 2 BR_L2 f=704 to 915MHz,
relative to 1575MHz - 55 - dBc
High Band Rejection 2 BR_H2 f=1710 to 1980MHz,
relative to 1575MHz - 43 - dBc
WLAN Band Rejection 2 BR_W2 f=2400 to 2500MHz,
relative to 1575MHz - 51 - dBc
RF IN Return Loss
(GPS)2 RLiGPS2 f=1575MHz (GPS) - 10 - dB
RF IN Return Loss
(GLONASS)2 RLiGLN2 f=1597 to 1606MHz (GLONASS) - 15 - dB
RF IN Return Loss
(BeiDou, Galileo)2 RLiBG2 f=1559 to 1591MHz (BeiDou, Galileo) - 13 - dB
RF OUT Return Loss
(GPS)2 RLoGPS2
f=1575MHz (GPS) - 15 - dB
RF OUT Return Loss
(GLONASS)2 RLoGLN2
f=1597 to 1606MHz (GLONASS) - 15 - dB
RF OUT Return Loss
(BeiDou, Galileo)2 RLoBG2 f=1559 to 1591MHz (BeiDou, Galileo) - 15 - dB
Group Delay Time Deviation
(GLONASS) 2 GDTDGLN2
f=1597 to 1606MHz (GLONASS) - 3 - ns
Group Delay Time Deviation
(BeiDou)2 GDTDB2 f=1559 to 1563.2MHz (BeiDou) - 4 - ns
Group Delay Time Deviation
(Galileo)2 GDTDG2 f=1559 to 1591MHz (Galileo) - 9 - ns
NJG1159PHH ”enigma/9min 00.,M
NJG1159PHH
- 5 -
I
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I TERMINAL INFORMATION
No. SYMBOL DESCRIPTION
1 VDD Supply voltage terminal. Please connect bypass capacitor C1 with ground as
close as possible.
2 VCTL Control voltage terminal.
3 GND Ground terminal. This terminal
should be connected to the ground plane as close
as possible for excellent RF performance.
4 PreIN RF input terminal. This terminal connects to input of pre-SAW filter.
5 GND Ground terminal. This terminal
should be connected to the ground plane as close
as possible for excellent RF performance.
6 PreOUT Pre-SAW filter output terminal. This terminal connects to LNAIN with L1.
7 LNAIN RF input terminal. This terminal requires only a matching inductor L1, and
does not require DC blocking capacitor because of integrated capacitor.
8 LNAOUT RF output terminal. This terminal requires no DC blocking capacitor since this
terminal has integrated DC blocking capacitor.
9 GND Ground terminal. This terminal
should be connected to the ground plane as close
as possible for excellent RF performance.
10 GND Ground terminal. This terminal sh
ould be connected to the ground plane as close
as possible for excellent RF performance.
NJG1159PHH ”enigma/9min 00.,M
NJG1159PHH
- 6 -
I
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I ELECTRICAL CHARACTERISTICS
Conditions: V
DD
=2.8V, V
CTL
=1.8V, Ta=25°C, Z
s
=Z
l
=50
Ω
, with application circuit
S11, S22 S21, S12
VSWR Zin, Zout
NJG1159PHH ”enigma/9min 00.,M
NJG1159PHH
- 7 -
I
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I ELECTRICAL CHARACTERISTICS
Conditions: V
DD
=2.8V, V
CTL
=1.8V, Ta=25°C, Z
s
=Z
l
=50
Ω
, with application circuit
0
1
2
3
4
0
5
10
15
20
1.54 1.56 1.58 1.60 1.62 1.64
NF, Gain vs. frequency
(V
DD
=2.8V, V
CTL
=1.8V)
Noise Figure (dB)
Gain (dB)
frequency (GHz)
Gain
NF
(NF, Gain: Exclude PCB, Connector Losses)
-60
-50
-40
-30
-20
-10
0
10
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
S21 vs. frequency
(V
DD
=2.8V, V
CTL
=1.8V)
S21 (dB)
frequency (GHz)
0
5
10
15
20
25
30
1.55 1.56 1.57 1.58 1.59 1.60 1.61 1.62
Group Delay vs. frequency
(VDD=2.8V, VCTL=1.8V)
Group Delay (ns)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
1
2
3
4
5
6
7
8
-40 -30 -20 -10 0 10
Pout, I
DD
vs. Pin
(V
DD
=2.8V, V
CTL
=1.8V, fRF=1575MHz)
Pout (dBm)
I
DD
(mA)
Pin (dBm)
I
DD
P-1dB(IN)=-10.8dBm
P-1dB(OUT)=+4.7dBm
Pout
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
Pout, IM3 vs. Pin
(V
DD
=2.8V, V
CTL
=1.8V, f1=1575MHz, f2=1576MHz)
Pout , IM3 (dBm)
Pin (dBm)
Pout
IM3
IIP3=-1.6dBm
OIP3=+14.9dBm
NJG1159PHH ”enigma/9min 00.,M
NJG1159PHH
- 8 -
I
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I ELECTRICAL CHARACTERISTICS
Conditions: V
DD
=2.8V, V
CTL
=1.8V, Ta=25°C, Z
s
=Z
l
=50
Ω
, with application circuit
4
6
8
10
12
14
16
18
20
1
2
3
4
5
6
7
8
9
-40 -30 -20 -10 0 10 20 30
Out-of-band P-1dB (fjam=900MHz)
(V
DD
=2.8V, V
CTL
=1.8V, fmeas=1575MHz at Pin=-40dBm)
Gain (dB)
I
DD
(mA)
Pin at 900MHz (dBm)
Gain
I
DD
P-1dB(IN)_OB>+26.0dBm
(Gain: Exclude PCB, Connector Losses)
4
6
8
10
12
14
16
18
20
1
2
3
4
5
6
7
8
9
-40 -30 -20 -10 0 10 20 30
Out-of-band P-1dB (fjam=1710MHz)
(V
DD
=2.8V, V
CTL
=1.8V, fmeas=1575MHz at Pin=-40dBm)
Gain (dB)
I
DD
(mA)
Pin at 1710MHz (dBm)
Gain
I
DD
P-1dB(IN)_OB=+25.3dBm
(Gain: Exclude PCB, Connector Losses)
-100
-80
-60
-40
-20
0
20
40
60
80
100
120
-40 -20 0 20 40 60 80 100
Out-of-band IIP2
(V
DD
=2.8V, V
CTL
=1.8V, fmeas=1575.4MHz,
f1=824.6MHz, f2=2400MHz)
Pout , IM2 (dBm)
Pin (dBm)
Pout
IM2
IIP2_OB=+86.1dBm
-100
-80
-60
-40
-20
0
20
40
60
80
100
-40 -20 0 20 40 60 80
Out-of-band IIP3
(V
DD
=2.8V, V
CTL
=1.8V, fmeas=1575.4MHz,
f1=1712.7MHz, f2=1850MHz)
Pout , IM3 (dBm)
Pin (dBm)
Pout
IM3
IIP3_OB=+54.5dBm
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-20 -10 0 10 20 30
2nd Harmonics
(V
DD
=2.8V, V
CTL
=1.8V,
fin=787.76MHz, fmeas=1575.52MHz)
2nd Harmonics (dBm)
Pin (dBm)
2fo=-35.9dBm
NJG1159PHH ”enigma/9min 00.,M
NJG1159PHH
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I
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I ELECTRICAL CHARACTERISTICS
Conditions: V
DD
=1.8V, V
CTL
=1.8V, Ta=25°C, Z
s
=Z
l
=50
Ω
, with application circuit
S11, S22 S21, S12
VSWR Zin, Zout
NJG1159PHH ”enigma/9min 00.,M
NJG1159PHH
- 10 -
I
II
I ELECTRICAL CHARACTERISTICS
Conditions: V
DD
=1.8V, V
CTL
=1.8V, Ta=25°C, Z
s
=Z
l
=50
Ω
, with application circuit
0
1
2
3
4
0
5
10
15
20
1.54 1.56 1.58 1.60 1.62 1.64
NF, Gain vs. frequency
(V
DD
=1.8V, V
CTL
=1.8V)
Noise Figure (dB)
Gain (dB)
frequency (GHz)
Gain
NF
(NF, Gain: Exclude PCB, Connector Losses)
-60
-50
-40
-30
-20
-10
0
10
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
S21 vs. frequency
(V
DD
=1.8V, V
CTL
=1.8V)
S21 (dB)
frequency (GHz)
0
5
10
15
20
25
30
1.55 1.56 1.57 1.58 1.59 1.60 1.61 1.62
Group Delay vs. frequency
(V
DD
=1.8V, V
CTL
=1.8V)
Group Delay (ns)
frequency (GHz)
-25
-20
-15
-10
-5
0
5
10
1
2
3
4
5
6
7
8
-40 -30 -20 -10 0 10
Pout, I
DD
vs. Pin
(V
DD
=1.8V, V
CTL
=1.8V, fRF=1575MHz)
Pout (dBm)
I
DD
(mA)
Pin (dBm)
I
DD
P-1dB(IN)=-13.6dBm
P-1dB(OUT)=+1.2dBm
Pout
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
Pout, IM3 vs. Pin
(V
DD
=1.8V, V
CTL
=1.8V, f1=1575MHz, f2=1576MHz)
Pout , IM3 (dBm)
Pin (dBm)
Pout
IM3
IIP3=-4.3dBm
OIP3=+11.5dBm
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NJG1159PHH
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I
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I ELECTRICAL CHARACTERISTICS
Conditions: V
DD
=1.8V, V
CTL
=1.8V, Ta=25°C, Z
s
=Z
l
=50
Ω
, with application circuit
4
6
8
10
12
14
16
18
20
1
2
3
4
5
6
7
8
9
-40 -30 -20 -10 0 10 20 30
Out-of-band P-1dB (fjam=900MHz)
(V
DD
=1.8V, V
CTL
=1.8V, fmeas=1575MHz at Pin=-40dBm)
Gain (dB)
I
DD
(mA)
Pin at 900MHz (dBm)
Gain
I
DD
P-1dB(IN)_OB>+26.0dBm
(Gain: Exclude PCB, Connector Losses)
4
6
8
10
12
14
16
18
20
1
2
3
4
5
6
7
8
9
-40 -30 -20 -10 0 10 20 30
Out-of-band P-1dB (fjam=1710MHz)
(V
DD
=1.8V, V
CTL
=1.8V, fmeas=1575MHz at Pin=-40dBm)
Gain (dB)
I
DD
(mA)
Pin at 1710MHz (dBm)
Gain
I
DD
P-1dB(IN)_OB=+23.1dBm
(Gain: Exclude PCB, Connector Losses)
-100
-80
-60
-40
-20
0
20
40
60
80
100
120
-40 -20 0 20 40 60 80 100
Out-of-band IIP2
(V
DD
=1.8V, V
CTL
=1.8V, fmeas=1575.4MHz,
f1=824.6MHz, f2=2400MHz)
Pout , IM2 (dBm)
Pin (dBm)
Pout
IM2
IIP2_OB=+84.4dBm
-100
-80
-60
-40
-20
0
20
40
60
80
100
-40 -20 0 20 40 60 80
Out-of-band IIP3
(V
DD
=1.8V, V
CTL
=1.8V, fmeas=1575.4MHz,
f1=1712.7MHz, f2=1850MHz)
Pout , IM3 (dBm)
Pin (dBm)
Pout
IM3
IIP3_OB=+53.3dBm
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-20 -10 0 10 20 30
2nd Harmonics
(V
DD
=1.8V, V
CTL
=1.8V,
fin=787.76MHz, fmeas=1575.52MHz)
2nd Harmonics (dBm)
Pin (dBm)
2fo=-34.8dBm
NJG1159PHH k-factor vs. frequency [Vm‘lEV‘ vm:1.ev) 16 ‘ M w 11 y) K ,_ 10 ‘ E o 3 l z x s — Jule — ,25 ‘c A — on: J1 — eye 7 2 — +5010 _ +35 1(2 ./ o a 5 1o 15 20 trequencywm) ”enigma/9min 00.,M
NJG1159PHH
- 12 -
I
II
I ELECTRICAL CHARACTERISTICS
Conditions: V
DD
=2.8V, V
CTL
=1.8V, Z
s
=Z
l
=50
Ω
, with application circuit
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
6
8
10
12
14
16
18
20
-60 -40 -20 0 20 40 60 80 100 120
NF, Gain vs. Temperature
(V
DD
=2.8V, V
CTL
=1.8V, fRF=1575MHz)
Noise Figure (dB)
Gain (dB)
Temperature (
o
C)
Gain
NF
(NF, Gain: Exclude PCB, Connector Losses)
0
5
10
15
20
-60 -40 -20 0 20 40 60 80 100 120
Return Loss vs. Temperature
(V
DD
=2.8V, V
CTL
=1.8V, fRF=1575MHz)
Return Loss (dB)
Temperature (
o
C)
RLi
RLo
20
30
40
50
60
70
-60 -40 -20 0 20 40 60 80 100 120
Band Rejection vs. Temperature
(V
DD
=2.8V, V
CTL
=1.8V)
Band Rejection (dBc)
Temperature (
o
C)
1980MHz
915MHz
2400MHz
0
5
10
15
20
-60 -40 -20 0 20 40 60 80 100 120
Group Delay Time Deviation
vs. Temperature
(V
DD
=2.8V, V
CTL
=1.8V,
fRF=1597~1606, 1559~1563.2, 1559~1591MHz)
Group Delay Time Deviation (ns)
Temperature (
o
C)
BeiDou
(1559~1563.2MHz)
Galileo
(1559~1591MHz)
GLONASS
(1597~1606MHz)
0
1
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-60 -40 -20 0 20 40 60 80 100 120
I
DD
vs. Temperature
(V
DD
=2.8V, V
CTL
=1.8V/0V, RF OFF)
I
DD
(mA) @Active Mode
I
DD
(µ
µ
µ
µA) @Standby Mode
Temperature (
o
C)
I
DD
(Active Mode)
I
DD
(Standby Mode)
NJG1159PHH ”enigma/9min 00.,M
NJG1159PHH
- 13 -
I
II
I ELECTRICAL CHARACTERISTICS
Conditions: V
DD
=2.8V, V
CTL
=1.8V, Z
s
=Z
l
=50
Ω
, with application circuit
-18
-16
-14
-12
-10
-8
-6
-60 -40 -20 0 20 40 60 80 100 120
P-1dB(IN) vs. Temperature
(V
DD
=2.8V, V
CTL
=1.8V, fRF=1575MHz)
P-1dB(IN) (dBm)
Temperature (
o
C)
P-1dB(IN)
6
8
10
12
14
16
18
-6
-4
-2
0
2
4
6
-60 -40 -20 0 20 40 60 80 100 120
OIP3, IIP3 vs. Temperature
(V
DD
=2.8V, V
CTL
=1.8V, f1=1575MHz, f2=1576MHz, Pin=-30dBm)
OIP3 (dBm)
IIP3 (dBm)
Temperature (
o
C)
OIP3
IIP3
50
60
70
80
90
100
-60 -40 -20 0 20 40 60 80 100 120
Out-of-band IIP2 vs. Temperature
(V
DD
=2.8V, V
CTL
=1.8V, fmeas=1575.4MHz,
f1=824.6MHz at Pin=+15dBm, f2=2400MHz at Pin=+15dBm)
Temperature (
o
C)
IIP2_OB
Out-of-band IIP2 (dBm)
30
40
50
60
70
80
-60 -40 -20 0 20 40 60 80 100 120
Out-of-band IIP3 vs. Temperature
(V
DD
=2.8V, V
CTL
=1.8V, fmeas=1575MHz,
f1=1713MHz at Pin=+15dBm, f2=1851MHz at Pin=+15dBm)
Temperature (
o
C)
IIP3_OB
Out-of-band IIP3 (dBm)
-60
-50
-40
-30
-20
-10
-60 -40 -20 0 20 40 60 80 100 120
2nd Harmonics vs. Temperature
(V
DD
=2.8V, V
CTL
=1.8V, fmeas=1575.52MHz,
fin=787.76MHz, Pin=+15dBm)
2nd Harmonics (dBm)
Temperature (
o
C)
2fo
NJG1159PHH 77/77 7 ‘_——~ \g ./ 1/ / _T—‘-———— _ ___ '"f‘" — —— — —.: \ ”enigma/9min 00.,M
NJG1159PHH
- 14 -
I
II
I ELECTRICAL CHARACTERISTICS
Conditions: V
CTL
=1.8V, Ta=25°C, Z
s
=Z
l
=50
Ω
, with application circuit
0.0
0.5
1.0
1.5
2.0
2.5
3.0
12
13
14
15
16
17
18
1.0 1.5 2.0 2.5 3.0 3.5 4.0
NF, Gain vs. V
DD
(V
CTL
=1.8V, fRF=1575MHz)
Noise Figure (dB)
Gain (dB)
V
DD
(V)
Gain
NF
(NF, Gain: Exclude PCB, Connector Losses)
0
5
10
15
20
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Return Loss vs. V
DD
(V
CTL
=1.8V, fRF=1575MHz)
Return Loss (dB)
V
DD
(V)
RLi
RLo
20
30
40
50
60
70
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Band Rejection vs. V
DD
(V
CTL
=1.8V)
Band Rejection (dBc)
V
DD
(V)
1980MHz
915MHz
2400MHz
0
2
4
6
8
10
12
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Group Delay Time Deviation vs. V
DD
(V
CTL
=1.8V, fRF=1597~1606, 1559~1563.2, 1559~1591MHz)
Group Delay Time Deviation (ns)
V
DD
(V)
BeiDou
(1559~1563.2MHz)
Galileo
(1559~1591MHz)
GLONASS
(1597~1606MHz)
0
1
2
3
4
5
6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
1.0 1.5 2.0 2.5 3.0 3.5 4.0
I
DD
vs. V
DD
(V
CTL
=1.8V/0V, RF OFF)
I
DD
(mA) @Active Mode
I
DD
(
µ
µ
µ
µ
A) @Standby Mode
V
DD
(V)
I
DD
(Active Mode)
I
DD
(Standby Mode)
NJG1159PHH ”enigma/9min 00.,M
NJG1159PHH
- 15 -
I
II
I ELECTRICAL CHARACTERISTICS
Conditions: V
CTL
=1.8V, Ta=25°C, Z
s
=Z
l
=50
Ω
, with application circuit
-20
-18
-16
-14
-12
-10
-8
-6
1.0 1.5 2.0 2.5 3.0 3.5 4.0
P-1dB(IN) vs. V
DD
(V
CTL
=1.8V, fRF=1575MHz)
P-1dB(IN) (dBm)
V
DD
(V)
P-1dB(IN)
4
6
8
10
12
14
16
18
-8
-6
-4
-2
0
2
4
6
1.0 1.5 2.0 2.5 3.0 3.5 4.0
OIP3, IIP3 vs. V
DD
(V
CTL
=1.8V, f1=1575MHz, f2=1576MHz, Pin=-30dBm)
OIP3 (dBm)
IIP3 (dBm)
V
DD
(V)
OIP3
IIP3
50
60
70
80
90
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Out-of-band IIP2 vs. V
DD
(V
CTL
=1.8V, fmeas=1575.4MHz,
f1=824.6MHz at Pin=+15dBm, f2=2400MHz at Pin=+15dBm)
V
DD
(V)
IIP2_OB
Out-of-band IIP2 (dBm)
30
40
50
60
70
80
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Out-of-band IIP3 vs. VDD
(VCTL=1.8V, fmeas=1575MHz,
f1=1713MHz at Pin=+15dBm, f2=1851MHz at Pin=+15dBm)
VDD (V)
IIP3_OB
Out-of-band IIP3 (dBm)
-60
-50
-40
-30
-20
-10
1.0 1.5 2.0 2.5 3.0 3.5 4.0
2nd Harmonics vs. V
DD
(V
CTL
=1.8V, fmeas=1575.52MHz,
fin=787.76MHz, Pin=+15dBm)
2nd Harmonics (dBm)
V
DD
(V)
2fo
NJG1159PHH 1 pin index ”enigma/9min 00.,M
NJG1159PHH
- 16 -
13nH
1000pF
I
II
I Application circuit
Parts ID Manufacture
L1 LQW15AN_00 Series
(MURATA)
C1 GRM03 Series
(MURATA)
(Top View)
RF IN
RF OUT
C1
V
DD
V
CTL
L1
9
10
2
1
3
6
7
8
VDD
VCTL
GND
PreOUT
LNAIN
LNAOUT
Pre-Filter
LNA
4
PreIN
5
GND
GND
GND
1 pin
i
ndex
Parts list
NJG1159PHH Mum/am €11,111
NJG1159PHH
- 17 -
I
II
I Evaluation board
<PCB LAYOUT GUIDELINE>
PRECAUTIONS
• Please layout ground pattern under this FEM in order not to couple with RFIN and RFOUT terminal.
• All external parts should be placed as close as possible to the FEM.
• For good RF performance, all GND terminals must be connected to PCB ground plane of substrate,
and via-holes for GND should be placed near the FEM.
PCB
Substrate: FR-4
Thickness: 0.2mm
Microstrip line width: 0.4mm (Z
0
=50Ω)
Size: 14.0mm x 14.0mm
(Top View)
GND Via Hole
Diameter φ= 0.2mm
PKG Terminal
PCB
PKG Outline
RF IN
RF OUT
L1
C1
V
CTL
V
DD
1 pin index
NJG1159PHH ,3 ¥ ‘ Lh“ ////////', ”enigma/9min 00.,M
NJG1159PHH
- 18 -
■
■■
■ RECOMMENDED FOOTPRINT PATTERN (HFFP10-HH Package) <Reference>
: Land
: Mask (Open area) *Metal mask thickness : 100µm
: Resist(Open area)
PKG : 1.5mm x 1.1mm
Pin pitch : 0.39mm
NJG1159PHH Measuring instruments Setting the NF analyzer Calibration setug Measurement Setug WWW 00.,M
NJG1159PHH
- 19 -
I
II
I NOISE FIGURE MEASUREMENT BLOCK DIAGRAM
Measuring
instruments
NF Analyzer : Agilent N8973A
Noise Source : Agilent 346A
Setting the NF analyzer
Measurement mode form
Device under test : Amplifier
System downconverter : off
Mode setup form
Sideband : LSB
Averages : 16
Average mode : Point
Bandwidth : 4MHz
Loss comp : off
Tcold : setting the temperature of noise source (303.15K)
Calibration setup
Noise Source
(Agilent 346A)
NF Analyzer
(Agilent N8973A)
Input (50Ω) Noise Source
Drive Output
* Preamplifier is used to improve NF
measurement accuracy.
* Noise source, preamplifier and NF
analyzer are connected directly.
Preamplifier
NJG1145UA2
Gain 15dB
NF 1.5dB
Measurement Setup
Noise Source
(Agilent 346A)
DUT
NF Analyzer
(Agilent N8973A)
Input (50Ω)
Noise Source
Drive Output
IN
OUT
* Noise source, DUT, preamplifier
and NF analyzer are connected
directly.
Preamplifier
NJG1145UA2
Gain 15dB
NF 1.5dB
NJG1159PHH HQ +\ H W #1 Tr True product may be damaged wmh e‘eclnc slam: dxscharge (ESD) or spike vouage. Please hand‘e wnh care :0 avoid these damages, ”enigma/9min 00.,M
NJG1159PHH
- 20 -
I
II
I Package outline (HFFP10-HH)
1pin index
Caution
s
on using
this
product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product ma
y be
damaged
with electric static discharge
(ESD)
or spike voltage.
P
lease
hand
le with care to avoid these damages
.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions.
The application circuits in this databook are
described only to show representative usages of
the product and not intended for the guarantee or
permission of any right including the industrial
rights.
Electrode Dimensions clearance
: ±0.05mm
Unit : mm
Substrate : Ceramic
Terminal treat : Au
Lid : SnAg/Kovar/Ni
Weight (typ.) : 4.9mg
This product is hollow seal package type, and it is with the structure susceptible to stress from the outside. Therefore, note the following in
relation to the contents, after conducting an evaluation, please use.
1. After mounting this product, to implement the potting and transfer molding, please the confirmation of resistance to temperature changes
and shrinkage stress involved in the molding.
2. When mounted on the product, collet diameter please use more than 1mmφ. In addition, the value of static load is recommended mounting
less than 5N.
3. For dynamic load at the time of mounting, please use it after confirming in consideration of the contact area / speed / load.
TOP VIEW
SIDE VIEW
BOTTOM VIEW
SIDE VIEW