MMIX4B20N300 Datasheet by IXYS

L'I IXYS
© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TC = 25°C to 150°C 3000 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C 34 A
IC110 TC = 110°C 14 A
ICM TC = 25°C, VGE = 19V, 1ms 150 A
10ms 74 A
SSOA VGE = 15V, TVJ = 125°C, RG = 20Ω ICM = 130 A
(RBSOA) Clamped Inductive Load 1500 V
PCTC = 25°C 150 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 seconds 260 °C
FCMounting Force 50..200 / 11..45 Nm/lb.in.
VISOL 50/60Hz, 1 Minute 4000 V~
Weight 8 g
DS100432A(06/12)
MMIX4B20N300
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 3000 V
VGE(th) IC = 250μA, VCE = VGE 2.5 5.0 V
ICES VCE = 0.8 • VCES, VGE = 0V 35 μA
Note 2, TJ = 125°C 1.5 mA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = 20A, VGE = 15V, Note 1 2.7 3.2 V
TJ = 125°C 3.2 V
VCES = 3000V
IC110 = 14A
VCE(sat) ≤ ≤
≤ ≤
≤ 3.2V
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
(Electrically Isolated Tab)
E1C3
C2
E3E4
G2
E2C4
G4
C1
G1
G3
G = Gate E = Emitter
C = Collector
G1
G2
E1C3
C1
C2
G3
G4
E2C4
E3E4
Isolated Tab
G3
C1
E1C3
G1
E3E4
G4
E2C4
G2
C2
Features
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
zIsolated Mounting Surface
z4000V~ Electrical Isolation
zHigh Blocking Voltage
zHigh Peak Current Capability
zLow Saturation Voltage
Advantages
zLow Gate Drive Requirement
zHigh Power Density
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zCapacitor Discharge Circuits
Preliminary Technical Information
L'I IXYS WWW/W4
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
MMIX4B20N300
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfS IC = 20A, VCE = 10V, Note 1 11 18 S
Cies 2230 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 92 pF
Cres 33 pF
Qg 105 nC
Qge IC = 20A, VGE = 15V, VCE = 1000V 13 nC
Qgc 45 nC
td(on) 64 ns
tr 210 ns
td(off) 300 ns
tf 504 ns
td(on) 68 ns
tr 540 ns
td(off) 300 ns
tf 395 ns
RthJC 0.83 °C/W
RthCS 0.05 °C/W
RthJA 30 °C/W
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 1250V, RG = 10Ω
Resistive Switching Times, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 1250V, RG = 10Ω
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VF IF = 20A, VGE = 0V 2.1 V
trr 1.35 μs
IRM 30 A
IF = 10A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
$25584 . ESE, 10v 5v vCE : 25v zav 15v 3 5 vDE erls <5 05="" $595="" ‘="" u.="">
© 2012 IXYS CORPORATION, All Rights Reserved
MMIX4B20N300
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
00.511.5 22.5 33.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
0 2 4 6 8 101214161820
V
CE
- Volts
I
C
-
Amperes
V
GE
= 25V
20V
10V
15V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
5
10
15
20
25
30
35
40
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 40A
I
C
= 20A
I
C
= 10A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5 7 9 1113151719212325
V
GE
- Volts
V
CE
- Volts
I
C
= 40A
T
J
= 25ºC
10A
20A
Fig. 6. Input Admittance
0
5
10
15
20
25
30
35
40
45
50
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
I'I IXYS 12 § E {ODD mm E E c: > . ‘ a :1: >3 2 6 5 / 3 mo 4 / 8 2 n m a so an mo HO 0 5 m 15 2a VCEVW _ .3 w nmsuc K7200 2“ dwd|
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
MMIX4B20N300
Fig. 7. Transconductance
0
4
8
12
16
20
24
28
0 5 10 15 20 25 30 35 40 45 50 55
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090100110
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1kV
I
C
= 20A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
00.511.522.53
V
F
- Volts
I
F
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 11. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 20Ω
dv / dt < 10V / ns
Fig. 12. Maximum Transient Thermal Impedance
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
D = tp / T
tp
T
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01 Single Pulse
m m m m m m n. m m m m m m “283252;. 353352;. .25 . 75:525.; m m m m m m m m \ // (TV 3:832? . ; 3383952 L. 35 25 an m an m 559 420 w m w mncaummacmz .: 233‘ 22.35;: am 259 209 250 220 125m 25%: n = 12m mun am a we 3:832; .: zuo m 20 25 30 35 an we , Amperes 15 m ©2012‘XVS CORPORA‘HON All Rights Reserved
© 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: MMIX4B20N300(5P)6-05-12-B
MMIX4B20N300
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
0
100
200
300
400
500
600
700
10 15 20 25 30 35 40
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 10Ω , V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
450
500
550
600
650
700
750
800
850
10 20 30 40 50 60 70 80
R
G
- Ohms
t
r - Nanoseconds
40
60
80
100
120
140
160
180
200
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 20A, 40A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
100
200
300
400
500
600
700
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
230
250
270
290
310
330
350
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 1250V
I
C
= 40A
I
C
= 20A
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
0
200
400
600
800
1000
1200
10 15 20 25 30 35 40
I
C
- Amperes
t
f
- Nanoseconds
220
260
300
340
380
420
460
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC, 25ºC
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
0
100
200
300
400
500
600
700
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 10Ω , V
GE
= 15V
V
CE
= 1250V
I
C
= 20A
I
C
= 40A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
200
250
300
350
400
450
500
550
600
10 20 30 40 50 60 70 80
R
G
- Ohms
t
f
- Nanoseconds
0
200
400
600
800
1000
1200
1400
1600
t
d
(
off
)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 20A
I
C
= 40A
SYN INCHES MILLIMETERS MIN MAX MIN MAX A .209 .224 5.30 5.70 A1 .154 .161 3.90 4.10 A2 .055 .063 1.40 1.60 b .035 .045 0.90 1.15 c .019 .026 0.45 0.65 D 976 994 24.80 25.25 E 998 .915 22.80 23.25 E1 .543 .559 13.80 14.20 6 .079 BSC 200 133C 61 .394 13813 10.00 133C 6 .315 BSD 8.00 BSC H 1.272 1.311 32.30 33.30 L .191 .209 4.60 5.30 L1 .051 .067 1.30 1.70 L2 .000 .006 0.00 0.15 S .736 .760 18.70 19.30 T .815 .839 20.70 21.30 (x 0 4‘ 0 4‘
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
MMIX4B20N300
Package Outline
IXYS A Lillelluse Tecnnumgy
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