(imeon
6
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-06
Turn-on delay time td(on) - 20 - ns
Rise time tr- 4 - ns
Turn-off delay time td(off) - 200 - ns
Fall time tf- 25 - ns
Turn-on energy Eon - 0.11 - mJ
Turn-off energy Eoff - 0.05 - mJ
Total switching energy Ets - 0.16 - mJ
Tvj=25°C,
VCC=400V,IC=6.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 57 - ns
Diode reverse recovery charge Qrr - 0.57 - µC
Diode peak reverse recovery current Irrm - 16.7 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -415 - A/µs
Tvj=25°C,
VR=400V,
IF=25.0A,
diF/dt=1200A/µs
Diode reverse recovery time trr - 32 - ns
Diode reverse recovery charge Qrr - 0.27 - µC
Diode peak reverse recovery current Irrm - 13.0 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -1150 - A/µs
Tvj=25°C,
VR=400V,
IF=6.0A,
diF/dt=1200A/µs
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=150°C
Turn-on delay time td(on) - 20 - ns
Rise time tr- 15 - ns
Turn-off delay time td(off) - 205 - ns
Fall time tf- 26 - ns
Turn-on energy Eon - 0.75 - mJ
Turn-off energy Eoff - 0.27 - mJ
Total switching energy Ets - 1.02 - mJ
Tvj=150°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-on delay time td(on) - 18 - ns
Rise time tr- 5 - ns
Turn-off delay time td(off) - 250 - ns
Fall time tf- 35 - ns
Turn-on energy Eon - 0.20 - mJ
Turn-off energy Eoff - 0.08 - mJ
Total switching energy Ets - 0.28 - mJ
Tvj=150°C,
VCC=400V,IC=6.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.