PMGD175XN Datasheet by NXP USA Inc.

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1. Product profile

1.1 General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits

Very fast switching Trench MOSFET technology

1.3 Applications

Relay driver

High-speed line driver

Low-side loadswitch

Switching sircuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.

PMGD175XN

30 V, dual N-channel Trench MOSFET

Rev. 1 — 1 June 2012 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

VDS drain-source voltage Tj=25°C --30V

VGS gate-source voltage -12 - 12 V

IDdrain current VGS =4.5V; T

amb =25°C; t ≤ 5 s [1] --1A

Static characteristics (per transistor)

RDSon drain-source on-state

resistance VGS =4.5V; I

D=1A; T

j= 25 °C - 170 225 mΩ

Product data sheet Rev. 1 — 1 June 2012 2 of 15

NXP Semiconductors PMGD175XN

30 V, dual N-channel Trench MOSFET

2. Pinning information

3. Ordering information

4. Marking

[1] % = placeholder for manufacturing site code

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1S1source TR1

SOT363 (TSSOP6)

2 G1 gate TR1

3D2drain TR2

4S2source TR2

5 G2 gate TR2

6D1drain TR1

132

G1 S2

017aaa254

Table 3. Ordering information

Type number Package

Name Description Version

PMGD175XN TSSOP6 plastic surface-mounted package; 6 leads SOT363

Table 4. Marking codes

Type number Marking code[1]

PMGD175XN U7%

.12, - In -_ 100 ’b

Product data sheet Rev. 1 — 1 June 2012 3 of 15

NXP Semiconductors PMGD175XN

30 V, dual N-channel Trench MOSFET

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

VDS drain-source voltage Tj=25°C - 30 V

VGS gate-source voltage -12 12 V

IDdrain current VGS =4.5V; T

amb =25°C; t ≤ 5 s [1] -1A

VGS =4.5V; T

amb =25°C [1] -0.9A

VGS =4.5V; T

amb =100°C [1] -0.6A

IDM peak drain current Tamb = 25 °C; single pulse; tp≤10 µs - 4 A

Ptot total power dissipation Tamb =25°C [2] - 260 mW

[1] - 310 mW

Tsp = 25 °C - 905 mW

Source-drain diode

ISsource current Tamb =25°C [1] -0.7A

Per device

Ptot total power dissipation Tamb =25°C [2] - 390 mW

Tjjunction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Fig 1. Normalized total power dissipation as a

function of junction temperature Fig 2. Normalized continuous drain current as a

function of junction temperature

Tj (°C)

−75 17512525 75−25

017aaa123

120

Pder

(%)

Tj (°C)

−75 17512525 75−25

017aaa124

120

Ider

(%)

Product data sheet Rev. 1 — 1 June 2012 4 of 15

NXP Semiconductors PMGD175XN

30 V, dual N-channel Trench MOSFET

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s.

IDM = single pulse

Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

017aaa589

VDS (V)

10-1 102

101

10-1

(A)

10-2

Limit RDSon = VDS/ID

tp = 100 μs

tp = 1 ms

tp = 100 ms

tp = 10 ms

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

Rth(j-a) thermal resistance

from junction to

ambient

in free air [1] - 417 480 K/W

[2] - 352 405 K/W

[3] - 295 340 K/W

Rth(j-sp) thermal resistance

from junction to solder

point

- 120 138 K/W

Per device

Rth(j-a) thermal resistance

from junction to

ambient

in free air [1] - - 320 K/W

Product data sheet Rev. 1 — 1 June 2012 5 of 15

NXP Semiconductors PMGD175XN

30 V, dual N-channel Trench MOSFET

FR4 PCB, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 6 cm2

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa578

tp (s)

10-3 102103

10110-2 10-1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0 0.01

017aaa579

tp (s)

10-3 102103

10110-2 10-1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33 0.25

0.2

0.1

0.05

0.02

00.01

Product data sheet Rev. 1 — 1 June 2012 6 of 15

NXP Semiconductors PMGD175XN

30 V, dual N-channel Trench MOSFET

7. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics (per transistor)

V(BR)DSS drain-source

breakdown voltage ID=250µA; V

GS =0V; T

j=25°C 30--V

VGSth gate-source threshold

voltage ID=250µA; V

DS =V

GS; Tj= 25 °C 0.5 1 1.5 V

IDSS drain leakage current VDS =30V; V

GS =0V; T

j=25°C --1µA

VDS =30V; V

GS =0V; T

j=150°C --10µA

IGSS gate leakage current VGS =12V; V

DS =0V; T

j= 25 °C - - 100 nA

VGS =-12V; V

DS =0V; T

j= 25 °C - - 100 nA

RDSon drain-source on-state

resistance VGS =4.5V; I

D=1A; T

j= 25 °C - 170 225 mΩ

VGS =4.5V; I

D=1A; T

j= 150 °C - 275 365 mΩ

VGS =2.5V; I

D=0.25A; T

j= 25 °C - 240 340 mΩ

gfs forward

transconductance VDS =10V; I

D=1A; T

j=25°C - 2.9 - S

Dynamic characteristics (per transistor)

QG(tot) total gate charge VDS =15V; I

D=1A; V

GS =4.5V;

Tj=25°C -0.71.1nC

QGS gate-source charge - 0.1 - nC

QGD gate-drain charge - 0.15 - nC

Ciss input capacitance VDS =15V; f=1MHz; V

GS =0V;

Tj=25°C -75-pF

Coss output capacitance - 30 - pF

Crss reverse transfer

capacitance -21-pF

td(on) turn-on delay time VDS =15V; I

D=1A; V

GS =4.5V;

RG(ext) =6Ω; Tj=25°C -6.5-ns

trrise time - 11.5 - ns

td(off) turn-off delay time - 14 - ns

tffall time -6-ns

Source-drain diode (per transistor)

VSD source-drain voltage IS= 0.7 A; VGS =0V; T

j=25°C - 0.8 1.2 V

Product data sheet Rev. 1 — 1 June 2012 7 of 15

NXP Semiconductors PMGD175XN

30 V, dual N-channel Trench MOSFET

Tj = 25 °C Tj = 25 °C; VDS = 5 V

(1) minimum values

(2) typical values

(3) maximum values

Fig 6. Output characteristics: drain current as a

function of drain-source voltage; typical values Fig 7. Sub-threshold drain current as a function of

gate-source voltage

Tj = 25 °C ID = 1 A

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values Fig 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

VDS (V)

04312

017aaa590

(A)

4.5 V 3.0 V 2.7 V

VGS = 2.5 V

2.3 V

2.2 V

2.0 V

1.8 V

1.5 V

aaa-002133

10-4

10-5

10-3

(A)

10-6

VGS (V)

0 2.01.51.00.5

(1) (2) (3)

ID (A)

0 4.03.01.0 2.0

017aaa591

300

450

150

600

750

RDSon

(mΩ)

1.8 V

VGS = 4.5 V

2.0 V 2.2 V 2.3 V 2.5 V

2.7 V

3.0 V

VGS (V)

0108462

017aaa592

400

200

600

800

RDSon

(mΩ)

Tj = 150 °C

Tj = 25 °C

REM! ‘1 = Rmmm

Product data sheet Rev. 1 — 1 June 2012 8 of 15

NXP Semiconductors PMGD175XN

30 V, dual N-channel Trench MOSFET

VDS > ID × RDSon

Fig 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance as

a function of junction temperature; typical

values

ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V

Fig 12. Gate-source threshold voltage as a function of

junction temperature Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

VGS (V)

3.52.50.5 3.02.01.00 1.5

017aaa593

(A)

Tj = 150 °C Tj = 25 °C

Tj (°C)

-60 180120060

017aaa594

1.0

1.4

1.8

0.6

Tj (°C)

-60 180120060

017aaa595

1.0

0.5

1.5

2.0

VGS(th)

(V)

max

typ

min

017aaa596

VDS (V)

10-1 102

101

102

(pF)

Ciss

Coss

Crss

Product data sheet Rev. 1 — 1 June 2012 9 of 15

NXP Semiconductors PMGD175XN

30 V, dual N-channel Trench MOSFET

ID = 1 A; VDS = 15 V; Tamb = 25 °C

Fig 14. Gate-source voltage as a function of gate

charge; typical values Fig 15. Gate charge waveform definitions

VGS = 0 V

Fig 16. Source current as a function of source-drain voltage; typical values

017aaa597

QG (nC)

0 0.750.500.25

VGS

(V)

017aaa137

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

VSD (V)

0 1.20.80.4

017aaa598

2.8

(A)

0.4

0.8

1.2

1.6

2.0

2.4

Tj = 150 °C Tj = 25 °C

—‘. ‘ ﬂ

Product data sheet Rev. 1 — 1 June 2012 10 of 15

NXP Semiconductors PMGD175XN

30 V, dual N-channel Trench MOSFET

8. Test information

9. Package outline

Fig 17. Duty cycle definition

006aaa812

duty cycle δ =

Fig 18. Package outline SOT363 (TSSOP6)

06-03-16Dimensions in mm

0.25

0.10

0.3

0.2

pin 1

index

1.3

0.65

2.2

2.0 1.35

1.15

2.2

1.8 1.1

0.8

0.45

0.15

132

465

Product data sheet Rev. 1 — 1 June 2012 11 of 15

NXP Semiconductors PMGD175XN

30 V, dual N-channel Trench MOSFET

10. Soldering

Fig 19. Reflow soldering footprint for SOT363 (TSSOP6)

Fig 20. Wave soldering footprint for SOT363 (TSSOP6)

solder lands

solder resist

occupied area

solder paste

sot363_fr

2.65

2.35 0.4 (2×)

0.6

(2×)

0.5

(4×)

0.5

(4×)

0.6

(4×)

0.6

(4×)

1.5

1.8

Dimensions in mm

sot363_fw

solder lands

solder resist

occupied area

preferred transport

direction during soldering

5.3

1.3 1.3

1.5

0.3

1.5

4.5

2.45

2.5

Dimensions in mm

Product data sheet Rev. 1 — 1 June 2012 12 of 15

NXP Semiconductors PMGD175XN

30 V, dual N-channel Trench MOSFET

11. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMGD175XN v.1 20120601 Product data sheet - -

waw n can

Product data sheet Rev. 1 — 1 June 2012 13 of 15

NXP Semiconductors PMGD175XN

30 V, dual N-channel Trench MOSFET

12. Legal information

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[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URLhttp://www.nxp.com.

12.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Product specification — The information and data provided in a Product

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customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

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Limited warranty and liability — Information in this document is believed to

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Notwithstanding any damages that customer might incur for any reason

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customer for the products described herein shall be limited in accordance

with theTerms and conditions of commercial sale of NXP Semiconductors.

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changes to information published in this document, including without

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notice. This document supersedes and replaces all information supplied prior

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their applications

and products using NXP Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

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applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Document status[1] [2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 1 June 2012 14 of 15

NXP Semiconductors PMGD175XN

30 V, dual N-channel Trench MOSFET

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published athttp://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

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Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G

reenChip,HiPerSmart,HITAG,I²C-bus

logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE

Ultralight,MoReUse,QLPAK,Silicon

Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia

andUCODE — are trademarks of NXP B.V.

HD Radio andHD Radio logo — are trademarks of iBiquity Digital

Corporation.

13. Contact information

For more information, please visit:http://www.nxp.com

For sales office addresses, please send an email to:salesaddresses@nxp.com

NXP Semiconductors PMGD175XN

30 V, dual N-channel Trench MOSFET

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 1 June 2012

Document identifier: PMGD175XN

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . .10

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14

13 Contact information. . . . . . . . . . . . . . . . . . . . . .14

PMGD175XN Datasheet by NXP USA Inc.

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