IRF9620, SiHF9620 Datasheet by Vishay Siliconix

— VISHAYJ V PrChannefl MOSFET THE PRODUCT DESCRIBED HERE‘N AND TH‘S DATASHEEF ARE SUBJECT TO SPEC‘F‘C DISCLA‘MERS‘ SET FORTH AT www wshay,com/doc791000
Document Number: 91082 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF9620, SiHF9620
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• P-Channel
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. ISD - 3.5 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.
c. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V) - 200
RDS(on) ()V
GS = - 10 V 1.5
Qg (Max.) (nC) 22
Qgs (nC) 12
Qgd (nC) 10
Configuration Single
S
G
D
P-Channel MOSFET
TO-220AB
GD
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free IRF9620PbF
SiHF9620-E3
SnPb IRF9620
SiHF9620
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS - 200 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at - 10 V TC = 25 °C ID
- 3.5
ATC = 100 °C - 2.0
Pulsed Drain CurrentaIDM - 14
Linear Derating Factor 0.32 W/°C
Maximum Power Dissipation TC = 25 °C PD40 W
Peak Diode Recovery dV/dtbdV/dt - 5.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s 300c
Mounting Torque 6-32 or M3 screw 10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
THE PRODUCT DESCRIBED HEREIN AND THTS DATASHEE‘TARE SUBJECT TO SPECTFTC DTSCLAIMEHS, SET FORTH AT www.mshay com/d05791000
www.vishay.com Document Number: 91082
2S11-0512-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA -62
°C/WCase-to-Sink, Flat, Greased Surface RthCS 0.50 -
Maximum Junction-to-Case (Drain) RthJC -3.1
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 200 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.22 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 200 V, VGS = 0 V - - - 100 μA
VDS = - 160 V, VGS = 0 V, TJ = 125 °C - - - 500
Drain-Source On-State Resistance RDS(on) V
GS = - 10 V ID = - 1.5 Ab--1.5
Forward Transconductance gfs VDS = - 50 V, ID = - 1.5 Ab1.0 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
- 350 -
pFOutput Capacitance Coss - 100 -
Reverse Transfer Capacitance Crss -30-
Total Gate Charge Qg
VGS = - 10 V ID = - 4.0 A, VDS = - 160 V,
see fig. 11 and 18b
--22
nC Gate-Source Charge Qgs --12
Gate-Drain Charge Qgd --10
Turn-On Delay Time td(on)
VDD = - 100 V, ID = - 1.5 A,
Rg = 50 , RD = 67, see fig. 17b
-15-
ns
Rise Time tr -25-
Turn-Off Delay Time td(off) -20-
Fall Time tf -15-
Internal Drain Inductance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance LS-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--- 3.5
A
Pulsed Diode Forward CurrentaISM --- 14
Body Diode Voltage VSD TJ = 25 °C, IS = - 3.5 A, VGS = 0 Vb--- 7.0
V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 3.5 A, dI/dt = 100 A/μsb- 300 450 ns
Body Diode Reverse Recovery Charge Qrr -1.92.9μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
VISHAYN g t‘. Square Wave Pulse Duration 15) THE PRODUCT DESCRIBED HERETN AND THTS DATASHEET ARE SUBJECT TO SPECTFTC DISCLATMERS‘ SET FORTH AT www wshay.com/doc791000
Document Number: 91082 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Typical Saturation Characteristics
Fig. 4 - Maximum Safe Operating Area
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
91082_01
80 µs Pulse Test
VDS, Drain-to-Source Voltage (V)
ID, Drain Current (A)
- 10
- 5
V
GS
= - 10, - 9, - 8, - 7 V
- 4 V
- 6 V
- 5 V
- 4
0
- 1
- 2
- 3
0- 50- 40
- 30- 20
91082_02 VGS, Gate-to-Source Voltage (V)
ID, Drain Current (A)
- 2
- 5
- 4
0
- 1
- 2
- 3
0- 10- 8
- 6- 4
80 µs Pulse Test
VDS > ID(on) x RDS(on) max.
TJ = - 55 °C
TJ = 25 °C
TJ = 125 °C
91082_03 VDS, Drain-to-Source Voltage (V)
ID, Drain Current (A)
- 1
- 5
- 4
0
- 1
- 2
- 3
0- 5- 4
- 3- 2
80 µs Pulse Test
V
GS
= - 10, - 9, - 8, - 7 V
- 4 V
- 6 V
- 5 V
100 µs
1 ms
10 ms
Operation in this area limited
by RDS(on)
Negative VDS, Drain-to-Source Voltage (V)
Negative ID, Drain Current (A)
TC = 25 °C
TJ = 150 °C
Single Pulse
102
2
5
0.1
1
2
5
10
2
5
25
110
25
102103
25
91082_04
2.0
1.0
0.1
10-5 10-4 10-3 10-2 0.1 1.0 10
PDM
t1
t2
t1, Square Wave Pulse Duration (s)
ZthJC(t)/RthJC, Normalized Effective Transien
Notes:
1. Duty Factor, D = t1/t2
2. Per Unit Base = RthJC = 3.12 °C/W
3. TJM - TC = PDM ZthJC(t)
Single Pulse (Transient
Thermal Impedence)
0.2
0.05
0.02
0.01
91082_05
0.1
D = 0.5
0.5
0.2
0.05
0.02
0.01 25 25 25 25 25 25
Thermal Impedence (Per Unit)
THE PRODUCT DESCRIBED HEREIN AND TH‘S DATASHEEFARE SUBJECT TO SPEC‘F‘C D‘SCLAIMERS, SEF FORTH AT www.mshay com/doc791000
www.vishay.com Document Number: 91082
4S11-0512-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
Fig. 6 - Typical Transconductance vs. Drain Current
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Breakdown Voltage vs. Temperature
Fig. 9 - Normalized On-Resistance vs. Temperature
Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
4.0
g
fs
,Transconductance (S)
I
D,
Drain Current (A)
- 1 - 2 - 3 - 4 - 5
0
TJ = 25
°
C
TJ = - 55
°
C
91082_06
TJ = 125
°
C
80 µs Pulse Test
VDS > ID(on) x RDS(on) max.
3.2
2.4
1.6
0.8
0.0
TJ = 25 °C
TJ = 150 °C
- 20
V
SD
, Source-to-Drain Voltage (V)
I
DR
, Reverse Drain Current (A)
- 2.0 - 6.8
- 5.6- 4.4- 3.2
91082_07
- 0.1
- 0.2
- 1.0
- 2
- 5
- 10
- 8.0
- 0.5
91082_08 TJ, Junction Temperature (°C)
BVDSS, Drain-to-Source Breakdown
1.25
Voltage (Normalized)
1.15
0.75
0.85
0.95
1.05
- 40 160
120
80400
91082_09 TJ, Junction Temperature (°C)
RDS(on), Drain-to-Source On Resistance
2.5
(Normalized)
2.0
0.0
0.5
1.0
1.5
- 40 160
12080400
I
D
= - 1.0 A
V
GS
= - 10 V
91082_10 VDS, Drain-to-Source Voltage (V)
C, Capacitance (pF)
500
0
100
200
300
400
0 - 50- 40- 30- 20
- 10
Ciss
Crss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgs, Cgd
Cgs + Cgd
≈ Cgs + Cgd
QG, Total Gate Charge (nC)
Negative VGS, Gate-to-Source Voltage (V)
20
16
12
8
0
4
04 16128
V
DS
= - 40 V
V
DS
= - 60 V
For test circuit
see figure 18
V
DS
= - 100 V
91082_11
I
D
= - 3.5 A
20
VISHAYN 55% THE PRODUCT DESCRIBED HERETN AND THTS DATASHEET ARE SUBJECT TO SPECTFTC DISCLATMERS‘ SET FORTH AT www wshay.com/doc791000
Document Number: 91082 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
Fig. 12 - Typical On-Resistance vs. Drain Current
Fig. 13 - Maximum Drain Current vs. Case Temperature
Fig. 14 - Power vs. Temperature Derating Curve
Fig. 15 - Clamped Inductive Test Circuit
Fig. 16 - Clamped Inductive Waveforms
Fig. 17a - Switching Time Test Circuit
Fig. 17b - Switching Time Waveforms
91082_12 ID, Drain Current (A)
RDS(on), Drain-to-Source
RDS(on) measured with current
pulse of 2.0 µs duration. Initial
TJ = 25 °C. (Heating effect of
2.0 µs pulse is minimal.)
0
1
2
3
4
5
0 - 20- 16- 8- 4 - 12
On Resistance (Ω)
V
GS
= - 10 V
V
GS
= - 20 V
150
Negative ID, Drain Current (A)
TC, Case Temperature (°C)
0.0
1.5
2.0
2.5
3.0
3.5
25
91082_13
1251007550
1.0
0.5
T
C
, Case Temperature (°C)
P
D
, Power Dissipation (W)
40
35
20
0
5
0 20 100806040
91082_14
140
120
30
25
15
10
0.05 Ω
D.U.T.
L
V
DS
+
-
V
DD
VGS = - 10 V
Var y t
p
to obtain
required I
L
t
p
VDD = 0.5 VDS EC = 0.75 VDS
EC
I
L
VDD
VDS
tp
EC
IL
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
- 10 V
+
-
V
DS
V
DD
VGS
10 %
90 %
VDS
td(on) trtd(off) tf
E1 ®:{$u{ w T T Q; I— :L ,, www vrshay.cam/Qgg”91082 THE PRODUCT DESCRIBED HEREIN AND TH \S DATASHEEF ARE SUBJECT TO SPEC‘FKZ D‘SCLAIMERS, SEF FORTH AT www.mshay com/doc791000
www.vishay.com Document Number: 91082
6S11-0512-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
Fig. 18a - Basic Gate Charge Waveform Fig. 18b - Gate Charge Test Circuit
Fig. 19 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91082.
QGS QGD
QG
VG
Charge
- 15 V
D.U.T.
- 3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P.W. Period
dI/dt
Diode recovery
dV/dt
Body diode forward drop
Body diode forward
current
Driver gate drive
Inductor current
D = P.W.
Period
+
-
-
-
-
+
+
+
Peak Diode Recovery dV/dt Test Circuit
• dV/dt controlled by Rg
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
• Compliment N-Channel of D.U.T. for driver
VDD
• ISD controlled by duty factor “D”
Note
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
VGS = - 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
VDD
Re-applied
voltage
Ripple ≤ 5 % ISD
Reverse
recovery
current
— VISHAY. hvm@wshay.com www.v\shay.com/doc?91000
Package Information
www.vishay.com Vishay Siliconix
Revison: 14-Dec-15 1Document Number: 66542
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-220-1
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
DIM. MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
A 4.24 4.65 0.167 0.183
b 0.69 1.02 0.027 0.040
b(1) 1.14 1.78 0.045 0.070
c 0.36 0.61 0.014 0.024
D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1) 3.33 4.04 0.131 0.159
Ø P 3.53 3.94 0.139 0.155
Q2.54 3.00 0.100 0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Package Picture
ASE Xi’an
— VISHAY. V
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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