L'I IXYS
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}
}
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN100N120C3H1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Reverse Sonic Diode (FRD)
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
VF IF = 60A, VGE = 0V, Note 1 2.7 V
TJ = 125°C 1.95 V
IRM 50 A
trr 235 ns
RthJC 0.52 °C/W
IF = 60A, VGE = 0V, TJ = 125°C
-diF/dt = 700A/μs, VR = 600V
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 30 50 S
Cies 4950 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 490 pF
Cres 120 pF
Qg(on) 260 nC
Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 47 nC
Qgc 102 nC
td(on) 27 ns
tri 110 ns
Eon 12.00 mJ
td(off) 120 ns
tfi 110 ns
Eoff 4.90 mJ
td(on) 27 ns
tri 116 ns
Eon 15.00 mJ
td(off) 146 ns
tfi 125 ns
Eoff 6.15 mJ
RthJC 0.18 °C/W
RthCS 0.05 °C/W
Inductive load, TJ = 25°C
IC = IC110, VGE = 15V
VCE = 0.5 • VCES, RG = 1
Note 2
Inductive load, TJ = 125°C
IC = IC110, VGE = 15V
VCE = 0.5 • VCES, RG = 1
Note 2