MUN(2,5)215, MMUN2215L, DTC114Txx, NSBC114TF3 Datasheet by onsemi

tor and 11 base— . or. The BRT eliminate. these individual component. by integrating them into 11 single device. The use of a BRT can reduce both system cost and board space. network con, ' emitter re. Features - Sinipli Circuit Design Reduces Board space - - Reduc Component Count - s Prefix tor Automotive and Other Applications Requiring Unique Site and Control Change Requirements: AEC—QlOl Qualitiert and PPAP Capable - These Devices are Pb—Freev Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS m = 25°C) Rating Symbol Max Unit Collectoreaase Voltage VCEO 50 Vde ColleCiareEmiuev Voltage VCEO 50 Vde Collector Current , Continuous iC 100 mAde Input Forward Voltage VtNM 40 Vde Input Revevse Voltage WNW) 6 Vde Stresses exceeding those listed in the Maximum Ratings table may damage the device. it any oi these limits are exceeded. device iuhctionality should not be assumed. damage may occur and reliability may be atteeted. o Semiconductor Components industries. LLC 2m I November, 2016 — Rev. 2 ON Semiconductor® www.ctnsem om R2 tNote, Mierodot may ‘Dale Code orientation on mahuiaeturmg toca ORDERING IN see detailed ordering. marktn the package dimensions seen
© Semiconductor Components Industries, LLC, 2012
November, 2016 − Rev. 2 1Publication Order Number:
DTC114T/D
MUN2215, MMUN2215L,
MUN5215, DTC114TE,
DTC114TM3, NSBC114TF3
Digital Transistors (BRT)
R1 = 10 kW, R2 = 8 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Collector−Base Voltage VCBO 50 Vdc
Collector−Emitter Voltage VCEO 50 Vdc
Collector Current − Continuous IC100 mAdc
Input Forward Voltage VIN(fwd) 40 Vdc
Input Reverse Voltage VIN(rev) 6 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet
.
ORDERING INFORMATION
SC−75
CASE 463
STYLE 1
MARKING DIAGRAMS
XXX = Specific Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
SC−59
CASE 318D
STYLE 1
SOT−23
CASE 318
STYLE 6
SC−70/SOT−323
CASE 419
STYLE 3
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
XX MG
G
1
1
XXX MG
G
XX MG
G
1
XX M
1
X M
XX M
1
1
PIN CONNECTIONS
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2
Table 1. ORDERING INFORMATION
Device Part Marking Package Shipping†
MUN2215T1G 8E SC−59
(Pb−Free) 3000 / Tape & Reel
MMUN2215LT1G, SMMUN2215LT1G* A8E SOT−23
(Pb−Free) 3000 / Tape & Reel
MUN5215T1G, SMUN5215T1G* 8E SC−70/SOT−323
(Pb−Free) 3000 / Tape & Reel
DTC114TET1G 8E SC−75
(Pb−Free) 3000 / Tape & Reel
DTC114TM3T5G 8E SOT−723
(Pb−Free) 8000 / Tape & Reel
NSBC114TF3T5G K (90°)SOT−1123
(Pb−Free) 8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
* (xx°) = Degree rotation in the clockwise direction.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (°C)
1251007550250−25−50
0
50
100
150
200
250
300
PD, POWER DISSIPATION (mW)
150
(1) (2) (3) (4) (5)
(1) SC−75 and SC−70/SOT−323; Minimum Pad
(2) SC−59; Minimum Pad
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm2, 1 oz. copper trace
(5) SOT−723; Minimum Pad
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3
Table 2. THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
THERMAL CHARACTERISTICS (SC−59) (MUN2215)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD230
338
1.8
2.7
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 540
370
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2) RqJL 264
287
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (SOT−23) (MMUN2215L)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD246
400
2.0
3.2
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 508
311
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2) RqJL 174
208
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5215)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD202
310
1.6
2.5
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 618
403
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2) RqJL 280
332
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (SC−75) (DTC114TE)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD200
300
1.6
2.4
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 600
400
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (SOT−723) (DTC114TM3)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD260
600
2.0
4.8
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2) RqJA 480
205
°C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
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MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
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4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT−1123) (NSBC114TF3)
Total Device Dissipation
TA = 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
PD254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4) RqJA 493
421
°C/W
Thermal Resistance, Junction to Lead
(Note 3) RqJL 193 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0) ICBO − − 100 nAdc
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0) ICEO − − 500 nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0) IEBO − − 0.9 mAdc
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V) hFE 160 350 −
Collector−Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 1.0 mA) VCE(sat) − − 0.25 Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA) Vi(off) − 0.6 0.5 Vdc
Input Voltage (on)
(VCE = 0.3 V, IC = 10 mA) Vi(on) 1.7 1.2 − Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)VOL − − 0.2 Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)VOH 4.9 − − Vdc
Input Resistor R1 7.0 10 13 kW
Resistor Ratio R1/R2− − −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
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TYPICAL CHARACTERISTICS
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3
75°C
25°C
−25°C
Figure 2. VCE(sat) vs. ICFigure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage
Vin, INPUT VOLTAGE (V)
Figure 6. Input Voltage vs. Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
10
0
101
100
10
1
0.001
1000
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
hFE, DC CURRENT GAIN
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
1
0
987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (V)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
0.01
0.1
30
VR, REVERSE VOLTAGE (V)
3.6
1.2
45 50403020100
0
C
ob
, OUTPUT CAPACITANCE (pF)
0.4
0.8
1.6
3.2
3525155
2.8
2.4
2.0
f = 10 kHz
IE = 0 A
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
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TYPICAL CHARACTERISTICS − NSBC114TF3
Figure 7. VCE(sat) vs. ICFigure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
403020 50100
0.01
0.1
1
100101
1
10
100
1000
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V)
50403020100
0
0.4
0.8
1.2
1.6
2.0
2.4
65743210
0.001
0.1
1
10
100
Figure 11. Input Voltage vs. Output Current
IC, COLLECTOR CURRENT (mA)
4030 5020100
0.1
1
10
100
VCE(sat), COLLECTOR−EMITTER
VOLTAGE (V)
hFE, DC CURRENT GAIN
Cob, OUTPUT CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (V)
IC/IB = 10
150°C
−55°C
25°C
VCE = 10 V
150°C
−55°C
25°C
f = 10 kHz
IE = 0 A
TA = 25°C
VO = 5 V
150°C−55°C
25°C
VO = 0.2 V
150°C
−55°C
25°C
0.01
T fir www.0nsemi.com :uo muse mm mm
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
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7
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
e
A1
b
A
E
D
2
3
1
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2.4
0.094
0.95
0.037
0.95
0.037
1.0
0.039
0.8
0.031 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
AMIN NOM MAX MIN
MILLIMETERS
1.00 1.15 1.30 0.039
INCHES
A1 0.01 0.06 0.10 0.001
b0.35 0.43 0.50 0.014
c0.09 0.14 0.18 0.003
D2.70 2.90 3.10 0.106
E1.30 1.50 1.70 0.051
e1.70 1.90 2.10 0.067
L0.20 0.40 0.60 0.008
2.50 2.80 3.00 0.099
0.045 0.051
0.002 0.004
0.017 0.020
0.005 0.007
0.114 0.122
0.059 0.067
0.075 0.083
0.016 0.024
0.110 0.118
NOM MAX
HE
+ D j m7 * ’1’ %%i EL {1 4‘7 Q 7 7 J@‘%
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
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8
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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9
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
AA2
De1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
‘ DW‘ENS‘ON‘NG AND TOLERANC‘NG PER ms: vusM waz 2 CONTROLLING D‘MENS‘ON M‘LUMETER e ‘ an ass n no Esc H A 5m: ‘ mm mg L A z m www.cnsem cm 10
MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3
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10
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE G
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
−E−
−D−
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
3
2
1
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.061 0.063 0.065
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70 0.004 0.006 0.008
0.060 0.063 0.067
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.803
0.071
+D~> 4k www.0nsemi.com
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11
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
DIM MIN NOM MAX
MILLIMETERS
A0.45 0.50 0.55
b0.15 0.21 0.27
b1 0.25 0.31 0.37
C0.07 0.12 0.17
D1.15 1.20 1.25
E0.75 0.80 0.85
e0.40 BSC
H1.15 1.20 1.25
L
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
−Y−
−X−
X0.08 Y
2X
E
12
3
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
L2 0.15 0.20 0.25
0.29 REF
3X
L2
3X
1
2X
TOP VIEW
BOTTOM VIEW
SIDE VIEW
RECOMMENDED
DIMENSIONS: MILLIMETERS
0.40
1.50
2X
PACKAGE
OUTLINE
0.27
2X
0.52
3X 0.36
BOT 'FDr ad data ‘5 Mount
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PACKAGE DIMENSIONS
SOT−1123
CASE 524AA
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
DIM MIN MAX
MILLIMETERS
A0.34 0.40
b0.15 0.28
c0.07 0.17
D0.75 0.85
E0.55 0.65
0.95 1.05
L0.185 REF
HE
D
E
c
A
−Y−
−X−
HE
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
e
b1 0.10 0.20
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
1
2
3
0.35 0.40
TOP VIEW
SIDE VIEW
3X
BOTTOM VIEW
L2
L
3X
DIMENSIONS: MILLIMETERS
1.20
2X
0.26
3X 0.34
PACKAGE
OUTLINE
b
2X b1
e
0.08 XY
L2 0.05 0.15
0.20
0.38
1
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