1Characteristics
Table 1. Absolute maximum ratings
Symbol Parameters Value Unit
IT(RMS) RMS on-state current (180° conduction angle)
BTA40, BTA41 Tc = 80 °C
40 A
BTB41 Tc = 95 °C
ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C)
tp = 16,7 ms 420
A
tp = 20 ms 400
I2t I2t value for fusing tp = 10 ms 1000 A2s
dl/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns f = 120 Hz Tj = 125 °C 50 A/µs
VDSM, VRSM Non repetitive surge peak off-state voltage tp = 20 ms Tj = 25 °C VDRM, VRRM + 100 V
IGM Peak gate current tp = 20 µs Tj = 125 °C 8 A
PG(AV) Average gate power dissipation Tj = 125 °C 1 W
Tstg Storage junction temperature range -40 to +150 °C
TjOperating junction temperature range -40 to +125 °C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - standard (4 quadrants)
Symbol Parameters Quadrant Values Unit
IGT(1)
VD = 12 V, RL = 33 Ω
I - II - III
IV Max. 50
100 mA
VGT I - II - III Max. 1.3 V
VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C I - II - III Min. 0.2 V
IH(2) IT = 500 mA Max. 80 mA
ILIG = 1.2 IGT
I - III - IV Max. 70
mA
II Max. 160
dV/dt(2) VD = 67 % VDRM gate open, Tj = 125 °C Min. 500 V/µs
(dV/dt)c(2) (dI/dt)c = 20 A/ms, Tj = 125 °C Min. 10 V/µs
1. Minimum IGT is guaranteed at 5 % of IGT max.
2. For both polarities of A2 referenced to A1
Table 3. Static electrical characteristics
Symbol Test conditions TjValue Unit
VTM(1) ITM = 60 A, tp = 380 µs 25 °C Max. 1.55 V
VTO(1) threshold on-state voltage 125 °C Max. 0.85 V
RD(1) Dynamic resistance 125 °C Max. 10 mΩ
IDRM/IRRM VT = VDRM, VT = VRRM
25 °C
Max.
5 µA
125 °C 5 mA
1. For both polarities of A2 referenced to A1
BTA40, BTA41, BTB41
Characteristics
DS2111 - Rev 11 page 2/12