NTZD3155C Datasheet by onsemi

MOSFET ON Semiconductor@ www.0nsemi.com
© Semiconductor Components Industries, LLC, 2014
June, 2019 − Rev. 4
1Publication Order Number:
NTZD3155C/D
NTZD3155C
MOSFET – Small Signal,
Complementary with ESD
Protection, SOT-563
20 V, 540 mA / -430 mA
Features
•Leading Trench Technology for Low RDS(on) Performance
•High Efficiency System Performance
•Low Threshold Voltage
•ESD Protected Gate
•Small Footprint 1.6 x 1.6 mm
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•DC−DC Conversion Circuits
•Load/Power Switching with Level Shift
•Single or Dual Cell Li−Ion Battery Operated Systems
•High Speed Circuits
•Cell Phones, MP3s, Digital Cameras, and PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 20 V
Gate−to−Source Voltage VGS ±6 V
N−Channel Continu-
ous Drain Current
(Note 1)
Steady
State
TA = 25°C
ID
540
mA
TA = 85°C 390
t v 5 s TA = 25°C 570
P−Channel Continu-
ous Drain Current
(Note 1)
Steady
State
TA = 25°C−430
TA = 85°C−310
t v 5 s TA = 25°C−455
Power Dissipation
(Note 1)
Steady
State TA = 25°C PD
250
mW
t v 5 s 280
Pulsed Drain Current N−Channel
tp = 10 msIDM
1500
mA
P−Channel −750
Operating Junction and Storage Temperature TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode) IS350 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s) TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq [1 oz] including traces).
SOT−563−6
CASE 463A
MARKING
DIAGRAM
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V(BR)DSS RDS(on) Typ
ID Max
(Note 1)
N−Channel
20 V
0.4 W @ 4.5 V
0.5 W @ 2.5 V 540 mA
P−Channel
−20 V
0.5 W @ −4.5 V
0.6 W @ −2.5 V −430 mA
0.7 W @ 1.8 V
1.0 W @ −1.8 V
1
6
TW M G
G
Device Package Shipping†
ORDERING INFORMATION
NTZD3155CT1G 4000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Top View
D1
G2
S2
S1
G1
6
5
4
1
2
3
D2
PINOUT: SOT−563
NTZD3155CT2G SOT−563
(Pb−Free)
TW = Specific Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
NTZD3155CT5G 8000 / Tape & Reel
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2
Thermal Resistance Ratings
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 2) RqJA 500 °C/W
Junction−to−Ambient – t = 5 s (Note 2) 447
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol N/P Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS NVGS = 0 V ID = 250 mA20 V
PID = −250 mA−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ18 mV/°C
Zero Gate Voltage Drain Current IDSS N VGS = 0 V, VDS = 16 V TJ = 25°C1.0 mA
P VGS = 0 V, VDS= −16 V −1.0
N VGS = 0 V, VDS = 16 V TJ = 125°C2.0 mA
P VGS = 0 V, VDS= − 16V −5.0
Gate−to−Source Leakage Current IGSS PVDS = 0 V, VGS = ±4.5 V $2.0 mA
N$5.0
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) NVGS = VDS ID = 250 mA0.45 1.0 V
PID = −250 mA−0.45 −1.0
Gate Threshold
Temperature Coefficient
VGS(TH)/TJ−1.9 −mV/°C
Drain−to−Source On Resistance RDS(on) N VGS = 4.5 V, I D = 540 mA 0.4 0.55
W
P VGS = −4.5V, ID = −430 mA 0.5 0.9
N VGS = 2.5 V, I D = 500 mA 0.5 0.7
P VGS = −2.5V, ID = −300 mA 0.6 1.2
N VGS = 1.8 V, ID = 350 mA 0.7 0.9
P VGS = −1.8V, ID = −150 mA 1.0 2.0
Forward Transconductance gFS N VDS = 10 V, ID = 540 mA 1.0
S
P VDS = −10 V, ID = −430 mA 1.0
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance CISS
Nf = 1 MHz, VGS = 0 V
VDS = 16 V
80 150
pF
Output Capacitance COSS 13 25
Reverse Transfer Capacitance CRSS 10 20
Input Capacitance CISS
Pf = 1 MHz, VGS = 0 V
VDS = −16 V
105 175
Output Capacitance COSS 15 30
Reverse Transfer Capacitance CRSS 10 20
3. Pulse Test: pulse width v300 ms, duty cycle v2%
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol N/P Test Condition Min Typ Max Unit
CHARGES, CAPACITANCES AND GATE RESISTANCE
Total Gate Charge QG(TOT)
NVGS = 4.5 V, VDS = −10 V; ID = 540 mA
1.5 2.5
nC
Threshold Gate Charge QG(TH) 0.1
Gate−to−Source Charge QGS 0.2
Gate−to−Drain Charge QGD 0.35
Total Gate Charge QG(TOT)
PVGS = −4.5 V, VDS = 10 V; ID = −380 mA
1.7 2.5
Threshold Gate Charge QG(TH) 0.1
Gate−to−Source Charge QGS 0.3
Gate−to−Drain Charge QGD 0.4
SWITCHING CHARACTERISTICS (VGS = V) (Note 4)
Turn−On Delay Time td(ON) N
VGS = 4.5 V, VDD = −10 V, ID = 540 mA,
RG = 10 W
6.0
ns
Rise Time tr4.0
Turn−Off Delay Time td(OFF) 16
Fall Time tf8.0
Turn−On Delay Time td(ON) P
VGS = −4.5 V, VDD = 10 V, ID = −215 mA,
RG = 10 W
10
Rise Time tr12
Turn−Off Delay Time td(OFF) 35
Fall Time tf19
Drain−Source Diode Characteristics
Forward Diode Voltage VSD N
VGS = 0 V, TJ = 25°C
IS = 350 mA 0.7 1.2
V
P IS = −350 mA −0.8 −1.2
Reverse Recovery Time tRR NVGS = 0 V,
dIS/dt = 100 A/ms
IS = 350 mA 6.5
ns
P IS = −350 mA 13
4. Switching characteristics are independent of operating junction temperatures
1.0V § § ,_ vGS : 1.6 v ._ E v95:2.0vm 2.2V E 0: n: 0: n: 3 3 u o z vGS : 1.4 v z <_( 3="" 0:="" n:="" n="" o="" :3="" d="" a="" _="" v65:1.2v="" ‘="" tfzsvc="" vgs="" :="" 1.0="" v="" 0="" 1="" 2="" a="" 4="" 5="" 6="" 7="" a="" 9="" 10="" 0="" 5="" 1.0="" i="" 5="" 2.0="" 2.5="" vos.="" drain-to-source="" voltage="" (v)="" v65.="" gate-to-source="" voltage="" 1v)="" figure="" 1.="" onifiegion="" characteristics="" figure="" 2.="" transier="" characteristics="" 5="" 1.0="" m="" i="" e="" id="" :="" 0.54="" a="" a="" 0-9="" tj="" :="" 25°c="" 7="" g="" 0.0="" :=""> [‘3' a 0.0 8 a 0: V . 5’ 0.7 3 3 0 8 g E 0.7 >7 5 ‘ Z 0 6 >— >— 9 9 0.6 E ‘3 i m a; E g '3. g 05 V6: 0.5 E ‘ E E v ‘ g 04 \ u: 0.4 ‘35 M . n m 0.3 0.3 1 2 a 4 5 6 0,2 0.4 0.6 0 V95, GATE-TO-SOUHCE VOLTAGE (V) ID, DRAW CURH Figure 3. Onenesistance versus Figure 4. OnrResistance v Gateitoisource Voltage and Gate Vo i i m - 1.0 ID : 0.54A g a vGs : 4.5 v 2 8 2 1.6 5 W 2 m o‘ 0: / 0 >— o I 4 g i z E H m 100 g g) 1.2 4' n m < ‘="" e="" £0;="" a="" lu="" 0:="" 0:="" 0.0="" 0.6="" 10="" -50="">25 0 25 50 75 100 125 150 2 4 6 B 10 12 TJ. JUNCTION TEMPERATURE to) Vos. DRAiN-TO-SOURCE Figure 5. Onenesistance Variation with Figure 6. Drainitoisource Temperature versus Volta www.cnsemi.com 4
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N−CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
0
0.2
0.4
0.6
0.8
1.0
1.2
012345678910
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
1.8 V
VGS = 1.6 V
VGS = 1.4 V
VGS = 1.2 V
VGS = 1.0 V 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.5 1.0 1.5 2.0 2.5 3.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 2. Transfer Characteristics
VDS w 10 V
TJ = 25°C
TJ = 100°C
TJ = −55°C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
123456
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE CURRENT
RESISTANCE (W)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
ID = 0.54 A
TJ = 25°C
5.5 V
VGS = 2.0 V to 2.2 V
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.2 0.4 0.6 0.8 1 1.2
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
TJ = 25°C
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
TJ = 25°C
0.6
0.8
1
1.2
1.4
1.6
1.8
2
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
Figure 5. On−Resistance Variation with
Temperature
ID = 0.54 A
VGS = 4.5 V
10
100
1000
2 4 6 8 101214161820
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (nA)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
TJ = 150°C
TJ = 100°C
VGS = 0 V
C. CAPACITANCE (pFi I, TIME (ns) 5 150 m 100 m Veg, GATEaTOaSOU HOE VOLTAG E 50 i |D : 0,54A T J : 25%: 9 0 0 5 10 15 20 0 0.2 04 0.5 05 1 12 i4 i Qg‘ TOTAL GATE CHARGE (nC) BRA Figure B. GaterloeSource and Figure 7. Capacitance Varialion DraineloeSourCe Vollage versus Tolal Charge 100 VD : 10 v In 7 0»? A A 0.5 7 v65 : 4 5 v 5 ,_ E 0.4 c: c: / 3 10 o 0.0 LU g / 3 0.2 o m 1’ 0.1 I o I 10 100 0,2 0.3 0.4 He. GATE RESISTANCE (s2) VSDT soun Figure 9. Resis Ive Switching Time Variation Figure 10. [1 versus Gale Resistance www.cnsemi.Com 5
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N−CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
0
50
100
150
200
0 5 10 15 20
Figure 7. Capacitance Variation
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
CISS
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0
4
8
12
16
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
QT
QGD
QGS
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
Qg, TOTAL GATE CHARGE (nC)
ID = 0.54 A
TJ = 25°C
VDS
VGS
1
10
100
1 10 100
t, TIME (ns)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
RG, GATE RESISTANCE (W)
td(OFF)
tf
td(ON)
tr
VDS = 10 V
ID = 0.2 A
VGS = 4.5 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
IS, SOURCE CURRENT (A)
Figure 10. Diode Forward Voltage versus
Current
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
VGS = 0 V
TJ = 25°C
COSS
DRAIN−TO−SOURCE VOLTAGE (V)
VDS = 0 V
VDS
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P−CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
−1 V
100°C
0
1
5
0.6
632
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
0.4
0.2
0
1
Figure 1. On−Region Characteristics
0.5
1
21.5 2.5
0.8
0.4
0.2
1
0
0
Figure 2. Transfer Characteristics
−VGS, GATE−TO−SOURCE VOLTAGE (V)
0.5
35
0.7
0.6
0.4
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
−VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
0.1 1.0
0.8
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−ID, DRAIN CURRENT (A)
−50 0−25 25
1.4
1.2
1
0.8
0.6
50 125100
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
TJ = 25°C
24
TJ = −55°C
ID = −0.43 A
TJ = 25°C
1.4
0.5
75 150
TJ = 25°C
ID = −0.43 A
VGS = −4.5 V
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
25°C
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
1.6
VGS = −1.8 V
−1.2 V
16
−1.4 V
−1.6 V
1.3
0.6
1.1
VGS = −2.5 V
710
VDS ≥ −10 V
0.8
0.2 0.3 0.4
0.9
VGS = −1.8 V
VGS = −2 V
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
24 8
10
2016
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
12
VGS = 0 V
−IDSS, LEAKAGE (nA)
TJ = 150°C
TJ = 100°C
100
1000
10000
610 1814
0.45
0.65
0.55
0.75
0.7
1.0
1.2
0.5 0.6 0.7 0.8 0.9
0.8
89
0.6
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P−CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = 0 V
−VGS
510
150
100
50
0
20
DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
021
4
1
0
QG, TOTAL GATE CHARGE (nC)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
COSS
CISS
CRSS ID = −0.215 A
TJ = 25°C
250
1.81.6
2
3
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
8
2
0
QGD
101
10
1
100
RG, GATE RESISTANCE (W)
t, TIME (ns)
VDD = −10 V
ID = −0.215 A
VGS = −4.5 V
100
0
200
5
4
6
td(OFF)
td(ON)
tf
tr
−VDS
15 1.40.2 1.2
0.9
0.2
0
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
−IS, SOURCE CURRENT (AMPS)
VGS = 0 V
TJ = 25°C
0.6
0.70.50.3
0.4
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
0.4 0.6 0.8
QT
0.80.60.4
9
3
1
5
7
QGS
\ \ 777+ 7 + "+77 \ 1m Jm am «he thls tn a nu mmumm and me
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PACKAGE DIMENSIONS
HE
DIM MIN NOM MAX
MILLIMETERS
A0.50 0.55 0.60
b0.17 0.22 0.27
C
D1.50 1.60 1.70
E1.10 1.20 1.30
e0.5 BSC
L0.10 0.20 0.30
1.50 1.60 1.70
0.020 0.021 0.023
0.007 0.009 0.011
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN NOM MAX
INCHES
SOT−563, 6 LEAD
CASE 463A
ISSUE F
eM
0.08 (0.003) X
b6 5 PL
A
C
−X−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
E
Y
12 3
45
L
6
1.35
0.0531
0.5
0.0197
ǒmm
inchesǓ
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
0.08 0.12 0.18 0.003 0.005 0.007
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