IGBT Modules

Results: 2
Series
CEconoDUAL™ 3
Configuration
2 IndependentHalf Bridge
Current - Collector (Ic) (Max)
375 A600 A
Current - Collector Cutoff (Max)
1 mA3 mA
NTC Thermistor
NoYes
Operating Temperature
-40°C ~ 150°C (TJ)-40°C ~ 150°C
Supplier Device Package
AG-ECONODModule
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FF300R17ME4B11BPSA1
FF300R17ME4B11BPSA1
MEDIUM POWER ECONO AG-ECONOD-411
Infineon Technologies
10
In Stock
1 : ¥1,509.53000
Tray
Tray
Active
Trench Field Stop
2 Independent
1700 V
375 A
1800 W
2.3V @ 15V, 300A
3 mA
24.5 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-ECONOD
0
In Stock
Check Lead Time
8 : ¥1,463.49000
Tray
Tray
Active
Trench Field Stop
Half Bridge
1700 V
600 A
-
2.3V @ 15V, 300A
1 mA
24.5 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
Showing
of 2

IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.