IGBT Modules

Results: 2
Voltage - Collector Emitter Breakdown (Max)
1200 V1700 V
Current - Collector (Ic) (Max)
310 A320 A
Power - Max
1100 W1250 W
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 200A2.45V @ 15V, 200A
Current - Collector Cutoff (Max)
3 mA5 mA
Input Capacitance (Cies) @ Vce
14 nF @ 25 V18 nF @ 25 V
Operating Temperature
-40°C ~ 125°C (TJ)-40°C ~ 150°C (TJ)
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Mfr Part #
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Price
Series
Package
Product Status
IGBT Type
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IGBT MODULE C SERIES
FF200R17KE3HOSA1
IGBT MOD 1700V 310A 1250W
Infineon Technologies
35
In Stock
1 : ¥1,498.45000
Tray
Tray
Active
Trench Field Stop
Half Bridge
1700 V
310 A
1250 W
2.45V @ 15V, 200A
3 mA
18 nF @ 25 V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
IGBT MODULE C SERIES
FF200R12KT4HOSA1
IGBT MOD 1200V 320A 1100W
Infineon Technologies
10
In Stock
1 : ¥916.33000
Tray
Tray
Active
Trench Field Stop
Half Bridge
1200 V
320 A
1100 W
2.15V @ 15V, 200A
5 mA
14 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
Showing
of 2

IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.