Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

PSMN013-100YSEX MOSFET N-CH 100V 82A LFPAK56 Nexperia USA Inc.	53,025 In Stock	1 : ¥14.53000 Cut Tape (CT) 1,500 : ¥6.91490 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	82A (Tj)	10V	13mOhm @ 20A, 10V	4V @ 1mA	75 nC @ 10 V	±20V	3775 pF @ 50 V	-	238W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
SQJ186ELP-T1_GE3 AUTOMOTIVE N-CHANNEL 80 V (D-S) Vishay Siliconix	1,879 In Stock	1 : ¥7.47000 Cut Tape (CT) 3,000 : ¥3.10220 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	66A (Tc)	4.5V, 10V	12.5mOhm @ 20A, 10V	2.5V @ 250µA	45 nC @ 10 V	±20V	2325 pF @ 25 V	-	135W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
PSMN4R0-40YS,115 MOSFET N-CH 40V 100A LFPAK56 Nexperia USA Inc.	65,883 In Stock	1 : ¥10.59000 Cut Tape (CT) 1,500 : ¥4.65032 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	10V	4.2mOhm @ 15A, 10V	4V @ 1mA	38 nC @ 10 V	±20V	2410 pF @ 20 V	-	106W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.