Single IGBTs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

IKW50N60H3FKSA1 IGBT TRENCH FS 600V 100A TO247-3 Infineon Technologies	475 In Stock	1 : ¥53.03000 Tube	TrenchStop®	Tube	Active	Trench Field Stop	600 V	100 A	200 A	2.3V @ 15V, 50A	333 W	2.36mJ	Standard	315 nC	23ns/235ns	400V, 50A, 7Ohm, 15V	130 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-1
IGW50N60TPXKSA1 IGBT TRENCH/FS 600V 80A TO247-3 Infineon Technologies	204 In Stock	1 : ¥24.38000 Tube	TrenchStop™	Tube	Not For New Designs	Trench Field Stop	600 V	80 A	150 A	1.8V @ 15V, 50A	319.2 W	1.53mJ (on), 850µJ (off)	Standard	249 nC	20ns/215ns	400V, 50A, 7Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3

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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.