IGBT Modules

Results: 2
Manufacturer
Infineon TechnologiesMicrochip Technology
Series
-C
Packaging
BulkTray
Configuration
Half BridgeSingle
Voltage - Collector Emitter Breakdown (Max)
600 V1700 V
Current - Collector (Ic) (Max)
260 A1100 A
Power - Max
680 W2900 W
Vce(on) (Max) @ Vge, Ic
1.9V @ 15V, 200A2.4V @ 15V, 600A
Current - Collector Cutoff (Max)
1 mA5 mA
Package / Case
D4Module
Supplier Device Package
D4Module
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
15
In Stock
1 : ¥985.29000
Tray
Tray
Active
Trench Field Stop
Half Bridge
600 V
260 A
680 W
1.9V @ 15V, 200A
5 mA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
APTGT600U170D4G
APTGT600U170D4G
IGBT MODULE 1700V 1100A 2900W D4
Microchip Technology
30
In Stock
1 : ¥3,456.96000
Bulk
-
Bulk
Active
Trench Field Stop
Single
1700 V
1100 A
2900 W
2.4V @ 15V, 600A
1 mA
51 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
D4
D4
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of 2

IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.