JFETs

Results: 3
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Voltage - Breakdown (V(BR)GSS)
15 V25 V
Drain to Source Voltage (Vdss)
15 V25 V
Current - Drain (Idss) @ Vds (Vgs=0)
10 mA @ 5 V20 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id
300 mV @ 100 µA1.5 V @ 100 µA1.8 V @ 100 µA
Input Capacitance (Ciss) (Max) @ Vds
6pF @ 5V10pF @ 5V
Power - Max
200 mW400 mW
Supplier Device Package
3-CP3-CPH
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT-23-3
CPH3910-TL-E
JFET N-CH 25V 50MA 3CPH
onsemi
48,489
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.21077
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
25 V
25 V
20 mA @ 5 V
50 mA
1.8 V @ 100 µA
6pF @ 5V
400 mW
150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CPH
SOT-23-3
2SK3557-6-TB-E
JFET N-CH 5V 3CP
onsemi
1,744
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.21077
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
15 V
15 V
20 mA @ 5 V
50 mA
1.5 V @ 100 µA
10pF @ 5V
200 mW
150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
SOT-23-3
2SK2394-6-TB-E
JFET N-CH 50MA 3CP
onsemi
11,342
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.57888
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
-
15 V
10 mA @ 5 V
50 mA
300 mV @ 100 µA
10pF @ 5V
200 mW
150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
Showing
of 3

JFETs

Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.