Single IGBTs

Results: 2
IGBT Type
-Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
600 V650 V
Current - Collector (Ic) (Max)
12 A74 A
Current - Collector Pulsed (Icm)
18 A120 A
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 6A2.1V @ 15V, 40A
Power - Max
88 W255 W
Switching Energy
200µJ360µJ (on), 100µJ (off)
Gate Charge
42 nC95 nC
Td (on/off) @ 25°C
9ns/130ns19ns/160ns
Test Condition
400V, 20A, 15Ohm, 15V400V, 6A, 23Ohm, 15V
Reverse Recovery Time (trr)
60 ns123 ns
Supplier Device Package
PG-TO220-3PG-TO220-3-1
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Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-220-3
IKP06N60TXKSA1
IGBT TRENCH FS 600V 12A TO220-3
Infineon Technologies
2,384
In Stock
1 : ¥13.63000
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Trench Field Stop
600 V
12 A
18 A
2.05V @ 15V, 6A
88 W
200µJ
Standard
42 nC
9ns/130ns
400V, 6A, 23Ohm, 15V
123 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3-1
606
In Stock
1 : ¥29.56000
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650 V
74 A
120 A
2.1V @ 15V, 40A
255 W
360µJ (on), 100µJ (off)
Standard
95 nC
19ns/160ns
400V, 20A, 15Ohm, 15V
60 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.