IGBT Modules

Results: 4
IGBT Type
-Trench
Current - Collector (Ic) (Max)
150 A210 A218 A220 A
Power - Max
600 W830 W
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 110A2.4V @ 15V, 110A2.5V @ 15V, 85A
Input Capacitance (Cies) @ Vce
4030 pF @ 25 V5.42 nF @ 25 V5420 pF @ 25 V5460 pF @ 25 V
Supplier Device Package
SOT-227SOT-227B
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IGBT Type
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
1200V, 110A, XPT GEN4 C4 CO-PACK
IXYN110N120C4H1
1200V, 110A, XPT GEN4 C4 CO-PACK
IXYS
281
In Stock
1 : ¥371.06000
Tube
Tube
Active
Trench
Single
1200 V
210 A
830 W
2.4V @ 15V, 110A
50 µA
5420 pF @ 25 V
Standard
No
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
1200V, 85A, XPT GEN4 C4 CO-PACK
IXYN85N120C4H1
1200V, 85A, XPT GEN4 C4 CO-PACK
IXYS
0
In Stock
Check Lead Time
1 : ¥304.07000
Tube
Tube
Active
Trench
Single
1200 V
150 A
600 W
2.5V @ 15V, 85A
50 µA
4030 pF @ 25 V
Standard
No
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
Littelfuse_Power_Semi_SOT-227B
IXYN110N120C4
IGBT 1200V 110A GEN4 XPT SOT227B
IXYS
0
In Stock
Check Lead Time
1 : ¥307.93000
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Tube
Active
-
Single
1200 V
220 A
830 W
2.4V @ 15V, 110A
50 µA
5.42 nF @ 25 V
Standard
No
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
1200V,110A, XPT GEN4 B4 CO-PACK
IXYN110N120B4H1
1200V,110A, XPT GEN4 B4 CO-PACK
IXYS
0
In Stock
Check Lead Time
1 : ¥371.06000
Tube
Tube
Active
Trench
Single
1200 V
218 A
830 W
2.1V @ 15V, 110A
50 µA
5460 pF @ 25 V
Standard
No
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
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of 4

IGBT Modules


Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.