81A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

UJ4C075018K3S SICFET N-CH 750V 81A TO247-3 Qorvo	5,766 In Stock	1 : ¥148.18000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	81A (Tc)	-	23mOhm @ 20A, 12V	6V @ 10mA	37.8 nC @ 15 V	±20V	1422 pF @ 100 V	-	385W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRFP054NPBF MOSFET N-CH 55V 81A TO247AC Infineon Technologies	800 In Stock	1 : ¥23.73000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	55 V	81A (Tc)	10V	12mOhm @ 43A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	2900 pF @ 25 V	-	170W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
UJ4C075018K4S SICFET N-CH 750V 81A TO247-4 Qorvo	500 In Stock	1 : ¥151.87000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	81A (Tc)	-	23mOhm @ 20A, 12V	6V @ 10mA	37.8 nC @ 15 V	±20V	1422 pF @ 100 V	-	385W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
NTH4L028N170M1 SIC MOSFET 1700 V 28 MOHM M1 SER onsemi	243 In Stock 4,500 Factory	1 : ¥314.58000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	81A (Tc)	20V	40mOhm @ 60A, 20V	4.3V @ 20mA	200 nC @ 20 V	+25V, -15V	4230 pF @ 800 V	-	535W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
SCT4018KRC15 1200V, 18M, 4-PIN THD, TRENCH-ST Rohm Semiconductor	4,789 In Stock	1 : ¥337.57000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	81A (Tc)	18V	23.4mOhm @ 42A, 18V	4.8V @ 22.2mA	170 nC @ 18 V	+21V, -4V	4532 pF @ 800 V	-	312W	175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
IRFP054N MOSFET N-CH 55V 81A TO247AC Infineon Technologies	0 In Stock	150 : ¥122.51413 Bag	HEXFET®	Bag	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	81A (Tc)	10V	12mOhm @ 43A, 10V	4V @ 250µA	130 nC @ 10 V	±20V	2900 pF @ 25 V	-	170W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRLR8256PBF MOSFET N-CH 25V 81A DPAK Infineon Technologies	0 In Stock	Discontinued at Digi-Key	HEXFET®	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	25 V	81A (Tc)	4.5V, 10V	5.7mOhm @ 25A, 10V	2.35V @ 25µA	15 nC @ 4.5 V	±20V	1470 pF @ 13 V	-	63W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRLR8256TRPBF MOSFET N-CH 25V 81A DPAK Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	25 V	81A (Tc)	4.5V, 10V	5.7mOhm @ 25A, 10V	2.35V @ 25µA	15 nC @ 4.5 V	±20V	1470 pF @ 13 V	-	63W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRLU8256PBF MOSFET N-CH 25V 81A IPAK Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	25 V	81A (Tc)	4.5V, 10V	5.7mOhm @ 25A, 10V	2.35V @ 25µA	15 nC @ 4.5 V	±20V	1470 pF @ 13 V	-	63W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
TSM85N10CZ C0G MOSFET N-CHANNEL 100V 81A TO220 Taiwan Semiconductor Corporation	0 In Stock	Obsolete	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	81A (Tc)	10V	10mOhm @ 40A, 10V	4V @ 250µA	154 nC @ 10 V	±20V	3900 pF @ 30 V	-	210W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.