630mA (Ta) Single FETs, MOSFETs

Results: 12
Manufacturer
Diodes IncorporatedonsemiVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New DesignsObsolete
FET Type
-N-ChannelP-Channel
Technology
-MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V250 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V10V
Rds On (Max) @ Id, Vgs
396mOhm @ 600mA, 4.5V400mOhm @ 600mA, 4.5V550mOhm @ 540mA, 4.5V710mOhm @ 400mA, 4.5V1.1Ohm @ 380mA, 10V-
Vgs(th) (Max) @ Id
1V @ 250µA4V @ 250µA-
Gate Charge (Qg) (Max) @ Vgs
0.74 nC @ 4.5 V1.4 nC @ 4.5 V2 nC @ 8 V14 nC @ 10 V
Vgs (Max)
±6V±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
33 pF @ 10 V43 pF @ 10 V60.67 pF @ 16 V150 pF @ 16 V260 pF @ 25 V
Power Dissipation (Max)
240mW (Ta)260mW (Ta)280mW (Ta)350mW (Ta)1W (Ta)-
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-
Mounting Type
-Surface MountThrough Hole
Supplier Device Package
4-HVMDIP-SC-75ASOT-23-3SOT-523
Package / Case
4-DIP (0.300", 7.62mm)-SC-75, SOT-416SOT-523TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-523
DMG1012T-7
MOSFET N-CH 20V 630MA SOT-523
Diodes Incorporated
370,922
In Stock
2,769,000
Factory
1 : ¥2.54000
Cut Tape (CT)
3,000 : ¥0.43427
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
400mOhm @ 600mA, 4.5V
1V @ 250µA
0.74 nC @ 4.5 V
±6V
60.67 pF @ 16 V
-
280mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-523
SOT-523
SOT-523
DMG1012TQ-7
MOSFET N-CH 20V 630MA SOT523
Diodes Incorporated
969,660
In Stock
1 : ¥2.05000
Cut Tape (CT)
3,000 : ¥0.28339
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
400mOhm @ 600mA, 4.5V
1V @ 250µA
0.74 nC @ 4.5 V
±6V
60.67 pF @ 16 V
-
280mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-523
SOT-523
SOT-23-3
DMN2004K-7
MOSFET N-CH 20V 630MA SOT23-3
Diodes Incorporated
22,358
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.68419
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
550mOhm @ 540mA, 4.5V
1V @ 250µA
-
±8V
150 pF @ 16 V
-
350mW (Ta)
-65°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Pkg 5868
SI1012CR-T1-GE3
MOSFET N-CH 20V SC75A
Vishay Siliconix
85,523
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.81628
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.5V, 4.5V
396mOhm @ 600mA, 4.5V
1V @ 250µA
2 nC @ 8 V
±8V
43 pF @ 10 V
-
240mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SC-75A
SC-75, SOT-416
4-DIP
IRFD224PBF
MOSFET N-CH 250V 630MA 4DIP
Vishay Siliconix
2,250
In Stock
1 : ¥11.74000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
630mA (Ta)
10V
1.1Ohm @ 380mA, 10V
4V @ 250µA
14 nC @ 10 V
±20V
260 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
4-HVMDIP
4-DIP (0.300", 7.62mm)
SOT-523
DMG1012T-13
MOSFET N-CH 20V 630MA SOT523 T&R
Diodes Incorporated
18,539
In Stock
5,350,000
Factory
1 : ¥2.54000
Cut Tape (CT)
10,000 : ¥0.32561
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
400mOhm @ 600mA, 4.5V
1V @ 250µA
0.74 nC @ 4.5 V
±6V
60.67 pF @ 16 V
-
280mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-523
SOT-523
SOT-523
DMP21D1UT-13
MOSFET BVDSS: 8V~24V SOT523 T&R
Diodes Incorporated
0
In Stock
Check Lead Time
10,000 : ¥0.34533
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
P-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
710mOhm @ 400mA, 4.5V
1V @ 250µA
1.4 nC @ 4.5 V
±8V
33 pF @ 10 V
-
260mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-523
SOT-523
SOT-523
DMP21D1UTQ-13
MOSFET BVDSS: 8V~24V SOT523 T&R
Diodes Incorporated
0
In Stock
Check Lead Time
10,000 : ¥0.45504
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
P-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
710mOhm @ 400mA, 4.5V
1V @ 250µA
1.4 nC @ 4.5 V
±8V
33 pF @ 10 V
-
260mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-523
SOT-523
SOT-523
DMP21D1UT-7
MOSFET BVDSS: 8V~24V SOT523 T&R
Diodes Incorporated
0
In Stock
Check Lead Time
3,000 : ¥0.46722
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
P-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
710mOhm @ 400mA, 4.5V
1V @ 250µA
1.4 nC @ 4.5 V
±8V
33 pF @ 10 V
-
260mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-523
SOT-523
SOT-523
DMP21D1UTQ-7
MOSFET BVDSS: 8V~24V SOT523 T&R
Diodes Incorporated
0
In Stock
195,000
Factory
Check Lead Time
3,000 : ¥0.56880
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
P-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
710mOhm @ 400mA, 4.5V
1V @ 250µA
1.4 nC @ 4.5 V
±8V
33 pF @ 10 V
-
260mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-523
SOT-523
MOSFET N-CH 20V 0.63A SC-88
NVTJD4401NT1G
MOSFET N-CH 20V 0.63A SC-88
onsemi
0
In Stock
6,000 : ¥0.80842
Tape & Reel (TR)
-
Tape & Reel (TR)
Obsolete
-
-
-
630mA (Ta)
-
-
-
-
-
-
-
-
-
Automotive
AEC-Q101
-
-
-
4-DIP
IRFD224
MOSFET N-CH 250V 630MA 4DIP
Vishay Siliconix
0
In Stock
Active
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
630mA (Ta)
10V
1.1Ohm @ 380mA, 10V
4V @ 250µA
14 nC @ 10 V
±20V
260 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
4-HVMDIP
4-DIP (0.300", 7.62mm)
Showing
of 12

630mA (Ta) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.