400A (Tc) Single FETs, MOSFETs

Results: 10

Filters

Stacked

Scrolling

Applied FiltersRemove All

Showing

of 10

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IXTX400N15X4 MOSFET N-CH 150V 400A PLUS247 Littelfuse Inc.	936 In Stock	1 : ¥244.90000 Tube	Ultra X4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	3.1mOhm @ 100A, 10V	4.5V @ 1mA	430 nC @ 10 V	±20V	14500 pF @ 25 V	-	1500W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTK400N15X4 MOSFET N-CH 150V 400A TO264 Littelfuse Inc.	294 In Stock 350 Factory	1 : ¥468.04000 Tube	Ultra X4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	3.1mOhm @ 100A, 10V	4.5V @ 1mA	430 nC @ 10 V	±20V	14500 pF @ 25 V	-	1500W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXFN400N15X3 MOSFET N-CH 150V 400A SOT227B Littelfuse Inc.	141 In Stock	1 : ¥380.77000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	2.5mOhm @ 200A, 10V	4.5V @ 8mA	365 nC @ 10 V	±20V	23700 pF @ 25 V	-	695W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
VS-FC420SA15 MOSFET N-CH 150V 400A SOT227 Vishay General Semiconductor - Diodes Division	77 In Stock	1 : ¥206.64000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	2.75mOhm @ 200A, 10V	5.4V @ 1mA	250 nC @ 10 V	±20V	13700 pF @ 25 V	-	909W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IXFK400N15X3 MOSFET N-CH 150V 400A TO264 Littelfuse Inc.	100 In Stock	1 : ¥335.95000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	3mOhm @ 200A, 10V	4.5V @ 8mA	365 nC @ 10 V	±20V	23700 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
BSM400C12P3G202 SICFET N-CH 1200V 400A MODULE Rohm Semiconductor	4 In Stock	1 : ¥7,512.04000 Tray	-	Tray	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	400A (Tc)	-	-	5.6V @ 106.8mA	-	+22V, -4V	17000 pF @ 10 V	-	1570W (Tc)	175°C (TJ)	Chassis Mount	Module	Module
IXTN400N15X4 MOSFET N-CH 150V 400A SOT227B Littelfuse Inc.	3 In Stock 50 Factory	1 : ¥391.12000 Tube	Ultra X4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	2.7mOhm @ 100A, 10V	4.5V @ 1mA	430 nC @ 10 V	±20V	14500 pF @ 25 V	-	1070W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFH400N075T2 MOSFET N-CH 75V 400A TO247AD Littelfuse Inc.	0 In Stock Check Lead Time	1 : ¥127.01000 Tube	HiPerFET™, TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	400A (Tc)	10V	2.3mOhm @ 100A, 10V	4V @ 250µA	420 nC @ 10 V	±20V	24000 pF @ 25 V	-	1000W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFT400N075T2 MOSFET N-CH 75V 400A TO268 Littelfuse Inc.	0 In Stock Check Lead Time	300 : ¥102.37960 Tube	HiPerFET™, TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	400A (Tc)	10V	2.3mOhm @ 100A, 10V	4V @ 250µA	420 nC @ 10 V	±20V	24000 pF @ 25 V	-	1000W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-268AA	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXFX400N15X3 MOSFET N-CH 150V 400A PLUS247-3 Littelfuse Inc.	0 In Stock Check Lead Time	300 : ¥252.78453 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	3mOhm @ 200A, 10V	4.5V @ 8mA	365 nC @ 10 V	±20V	23700 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant

Showing

of 10

400A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.