4.5A (Tj) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI2300-TP MOSFET N-CH 20V 4.5A SOT23 Micro Commercial Co	11,212 In Stock	1 : ¥3.86000 Cut Tape (CT) 3,000 : ¥0.86080 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.5A (Tj)	2.5V, 4.5V	25mOhm @ 4.5A, 4.5V	900mV @ 250µA	4.2 nC @ 4.5 V	±10V	482 pF @ 10 V	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
MCU05N60A-TP MOSFET N-CH 600V 4.5A DPAK Micro Commercial Co	14,542 In Stock	1 : ¥9.03000 Cut Tape (CT) 2,500 : ¥3.73489 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	4.5A (Tj)	10V	2.5Ohm @ 2.25A, 10V	4V @ 250µA	-	±30V	670 pF @ 25 V	-	1.25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
RQ6E045BNTCR MOSFET N-CH 30V 4.5A TSMT Rohm Semiconductor	2,760 In Stock	1 : ¥4.02000 Cut Tape (CT) 3,000 : ¥1.07701 Tape & Reel (TR) 1 : ¥3.45000 Cut Tape (CT)	-	Tape & Reel (TR) Cut Tape (CT) Cut Tape (CT) Digi-Reel® Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	4.5A (Tj)	4.5V, 10V	30mOhm @ 4.5A, 10V	2.5V @ 1mA	8.4 nC @ 10 V	±20V	330 pF @ 15 V	-	1.25W (Ta)	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
N0300P-T1B-AT TRANSISTOR Renesas Electronics Corporation	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	-	-	-	4.5A (Tj)	-	-	-	-	-	-	-	-	-	-	-	-

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4.5A (Tj) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.