29A (Ta), 155A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

NTMFS5H419NLT1G MOSFET N-CH 40V 29A/155A 5DFN onsemi	1,424 In Stock	1 : ¥13.46000 Cut Tape (CT) 1,500 : ¥5.90585 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	29A (Ta), 155A (Tc)	4.5V, 10V	2.1mOhm @ 20A, 10V	2V @ 250µA	45 nC @ 10 V	±20V	2900 pF @ 20 V	-	3.1W (Ta), 89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTD5C632NLT4G T6 60V LL DPAK onsemi	2,258 In Stock	1 : ¥16.91000 Cut Tape (CT) 2,500 : ¥7.62720 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	29A (Ta), 155A (Tc)	4.5V, 10V	2.5mOhm @ 50A, 10V	2.1V @ 250µA	34 nC @ 4.5 V	±20V	5700 pF @ 25 V	-	4W (Ta), 115W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
NVD5C632NLT4G MOSFET N-CH 60V 29A/155A DPAK onsemi	0 In Stock Check Lead Time	1 : ¥28.65000 Cut Tape (CT) 2,500 : ¥13.96339 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	29A (Ta), 155A (Tc)	4.5V, 10V	2.5mOhm @ 50A, 10V	2.1V @ 250µA	78 nC @ 10 V	±20V	5700 pF @ 25 V	-	4W (Ta), 115W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63

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29A (Ta), 155A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.