282A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IPF014N08NF2SATMA1 TRENCH 40<-<100V PG-TO263-7 Infineon Technologies	1,049 In Stock	1 : ¥38.50000 Cut Tape (CT) 800 : ¥23.26525 Tape & Reel (TR)	StrongIRFET™ 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	282A (Tc)	6V, 10V	1.4mOhm @ 100A, 10V	3.8V @ 267µA	255 nC @ 10 V	±20V	12000 pF @ 40 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-14	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GSGP0R703 MOSFET, N-CH, SINGLE, 282.00A, 3 Good-Ark Semiconductor	4,990 In Stock	1 : ¥13.63000 Cut Tape (CT) 5,000 : ¥5.36822 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	282A (Tc)	10V	0.7mOhm @ 30A, 10V	2.3V @ 250µA	122 nC @ 10 V	±20V	9045 pF @ 15 V	-	139W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PPAK (5.1x5.86)	8-PowerTDFN
BSC010N04LSCATMA1 MOSFET N-CH 40V 282A Infineon Technologies	0 In Stock Check Lead Time	1 : ¥22.25000 Cut Tape (CT) 5,000 : ¥10.73047 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	282A (Tc)	4.5V, 10V	1.05mOhm @ 50A, 10V	2V @ 250µA	133 nC @ 10 V	±20V	9500 pF @ 20 V	-	139W (Tc)	-55°C ~ 150°C (TJ)	-	-	-	-	-

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282A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.