Single FETs, MOSFETs

Results: 2
Series
-eGaN®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
8.2A (Ta)101A (Ta)
Rds On (Max) @ Id, Vgs
1.8mOhm @ 50A, 5V13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id
2.5V @ 14mA2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 5 V23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
575 pF @ 50 V3200 pF @ 50 V
Supplier Device Package
7-QFN (3x5)Die
Package / Case
7-PowerWQFNDie
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
EPC2052
EPC2052
GANFET N-CH 100V 8.2A DIE
EPC
134,667
In Stock
1 : ¥12.48000
Cut Tape (CT)
2,500 : ¥5.62446
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
8.2A (Ta)
5V
13.5mOhm @ 11A, 5V
2.5V @ 3mA
4.5 nC @ 5 V
+6V, -4V
575 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
EPC2302
EPC2302
TRANS GAN 100V DIE .0018OHM
EPC
61,027
In Stock
1 : ¥54.27000
Cut Tape (CT)
3,000 : ¥36.28781
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
101A (Ta)
5V
1.8mOhm @ 50A, 5V
2.5V @ 14mA
23 nC @ 5 V
+6V, -4V
3200 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
7-QFN (3x5)
7-PowerWQFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.