Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
OptiMOS™U-MOSIII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)22A (Ta). 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 5V4.5V, 10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 20A, 10V630mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id
1V @ 1mA2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.23 nC @ 4 V44 nC @ 10 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
46 pF @ 10 V2800 pF @ 15 V
Power Dissipation (Max)
150mW (Ta)2.1W (Ta), 69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
PG-TSDSON-8-FLVESM
Package / Case
8-PowerTDFNSOT-723
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
444,946
In Stock
1 : ¥3.04000
Cut Tape (CT)
8,000 : ¥0.52096
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
500mA (Ta)
1.5V, 5V
630mOhm @ 200mA, 5V
1V @ 1mA
1.23 nC @ 4 V
±10V
46 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VESM
SOT-723
TSDSON-8
BSZ019N03LSATMA1
MOSFET N-CH 30V 22A . 40A TSDSON
Infineon Technologies
89,027
In Stock
1 : ¥9.28000
Cut Tape (CT)
5,000 : ¥5.52319
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta). 40A (Tc)
4.5V, 10V
1.9mOhm @ 20A, 10V
2V @ 250µA
44 nC @ 10 V
±20V
2800 pF @ 15 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.