22A (Ta), 76A (Tc) Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiRohm Semiconductor
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 22A, 10V4.1mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
2.5V @ 2mA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4545 pF @ 20 V5850 pF @ 15 V
Power Dissipation (Max)
2.5W (Ta), 69W (Tc)3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-HSOP8-PQFN (5x6)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Applied FiltersRemove All

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
HSOP8
RS1E220ATTB1
MOSFET P-CH 30V 22A/76A 8HSOP
Rohm Semiconductor
8,281
In Stock
1 : ¥21.67000
Cut Tape (CT)
2,500 : ¥9.77047
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta), 76A (Tc)
4.5V, 10V
4.1mOhm @ 22A, 10V
2.5V @ 2mA
130 nC @ 10 V
±20V
5850 pF @ 15 V
-
3W (Ta)
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
8-PQFN
FDMS8333L
MOSFET N CH 40V 22A POWER 56
onsemi
2,409
In Stock
6,000
Factory
1 : ¥11.41000
Cut Tape (CT)
3,000 : ¥4.73425
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
22A (Ta), 76A (Tc)
4.5V, 10V
3.1mOhm @ 22A, 10V
3V @ 250µA
64 nC @ 10 V
±20V
4545 pF @ 20 V
-
2.5W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
Showing
of 2

22A (Ta), 76A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.