200mA Single FETs, MOSFETs

Results: 2
Manufacturer
Micro Commercial Coonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
50 V100 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
4Ohm @ 200mA, 4.5V5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
800mV @ 250µA2.5V @ 250µA
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
14 pF @ 25 V24 pF @ 10 V
Power Dissipation (Max)
350mW (Ta)830mW
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3SOT-523
Package / Case
SOT-523TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS123
MOSFET N-CH 100V 170MA SOT23-3
onsemi
64,247
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.51982
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200mA
4.5V, 10V
5Ohm @ 200mA, 10V
2.5V @ 250µA
1.8 nC @ 10 V
±20V
14 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT 523
SI0205-TP
N-CHANNEL MOSFET,SOT-523
Micro Commercial Co
5,686
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.46911
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA
2.5V, 4.5V
4Ohm @ 200mA, 4.5V
800mV @ 250µA
-
±8V
24 pF @ 10 V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
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of 2

200mA Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.