192A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IRF100S201 MOSFET N-CH 100V 192A D2PAK Infineon Technologies	1,543 In Stock	1 : ¥30.87000 Cut Tape (CT) 800 : ¥18.65633 Tape & Reel (TR)	HEXFET®, StrongIRFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	192A (Tc)	10V	4.2mOhm @ 115A, 10V	4V @ 250µA	255 nC @ 10 V	±20V	9500 pF @ 50 V	-	441W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRF100B201 MOSFET N-CH 100V 192A TO220AB Infineon Technologies	2,452 In Stock	1 : ¥29.47000 Tube	HEXFET®, StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	192A (Tc)	10V	4.2mOhm @ 115A, 10V	4V @ 250µA	255 nC @ 10 V	±20V	9500 pF @ 50 V	-	441W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IXFN210N30P3 MOSFET N-CH 300V 192A SOT227B IXYS	0 In Stock Check Lead Time	1 : ¥381.18000 Tube	HiPerFET™, Polar3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	192A (Tc)	10V	14.5mOhm @ 105A, 10V	5V @ 8mA	268 nC @ 10 V	±20V	16200 pF @ 25 V	-	1500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
SQS120ELNW-T1_GE3 AUTOMOTIVE N-CHANNEL 30 V (D-S) Vishay Siliconix	0 In Stock Check Lead Time	1 : ¥8.46000 Cut Tape (CT) 3,000 : ¥3.49628 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	192A (Tc)	4.5V, 10V	1.8mOhm @ 10A, 10V	2.5V @ 250µA	88 nC @ 10 V	±20V	4590 pF @ 25 V	-	119W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount, Wettable Flank	PowerPAK® 1212-8SLW	PowerPAK® 1212-8SLW
DMTH4002SCTB-13 MOSFET BVDSS: 31V~40V TO263 T&R Diodes Incorporated	0 In Stock 3,200 Factory Check Lead Time	800 : ¥7.02416 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	192A (Tc)	10V	3mOhm @ 90A, 10V	4V @ 250µA	77.5 nC @ 10 V	±20V	7180 pF @ 20 V	-	6W (Ta), 166.7W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263AB (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMTH4002SCTBQ-13 MOSFET BVDSS: 31V~40V TO263 T&R Diodes Incorporated	0 In Stock 3,200 Factory Check Lead Time	800 : ¥8.77954 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	192A (Tc)	10V	3mOhm @ 90A, 10V	4V @ 250µA	77.5 nC @ 10 V	±20V	7180 pF @ 20 V	-	6W (Ta), 166.7W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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192A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.