16.1A (Tc) Single FETs, MOSFETs

Showing

of 4

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI4401DDY-T1-GE3 MOSFET P-CH 40V 16.1A 8SO Vishay Siliconix	17,640 In Stock	1 : ¥6.81000 Cut Tape (CT) 2,500 : ¥2.59954 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	16.1A (Tc)	4.5V, 10V	15mOhm @ 10.2A, 10V	2.5V @ 250µA	95 nC @ 10 V	±20V	3007 pF @ 20 V	-	2.5W (Ta), 6.3W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IPD65R250C6XTMA1 MOSFET N-CH 650V 16.1A TO252-3 Infineon Technologies	0 In Stock	Obsolete	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	16.1A (Tc)	10V	250mOhm @ 4.4A, 10V	3.5V @ 400µA	44 nC @ 10 V	±20V	950 pF @ 100 V	-	208.3W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD65R250E6XTMA1 MOSFET N-CH 650V 16.1A TO252-3 Infineon Technologies	0 In Stock	Obsolete	CoolMOS™ E6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	16.1A (Tc)	10V	250mOhm @ 4.4A, 10V	3.5V @ 400µA	45 nC @ 10 V	±20V	950 pF @ 1000 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
FDB9509L-F085 MOSFET 40V 110X72 MIL DPAK onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	-	-	-	16.1A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-

Showing

of 4

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.