127A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IMW120R014M1HXKSA1 SIC DISCRETE Infineon Technologies	144 In Stock	1 : ¥298.25000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	127A (Tc)	15V, 18V	18.4mOhm @ 54.3A, 18V	5.2V @ 23.4mA	145 nC @ 18 V	+20V, -5V	4580 pF @ 800 V	-	455W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IMZA120R014M1HXKSA1 SIC DISCRETE Infineon Technologies	935 In Stock	1 : ¥312.61000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	127A (Tc)	15V, 18V	18.4mOhm @ 54.3A, 18V	5.2V @ 23.4mA	145 nC @ 18 V	+20V, -5V	4580 pF @ 25 V	-	455W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8	TO-247-4
NTH4L014N120M3P SIC MOSFET 1200 V 14 MOHM M3P SE onsemi	73 In Stock	1 : ¥237.58000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	127A (Tc)	15V, 18V	20mOhm @ 74A, 18V	4.63V @ 37mA	329 nC @ 18 V	+22V, -10V	6230 pF @ 800 V	-	686W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4

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127A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.