106A (Tc) Single FETs, MOSFETs

Results: 22
Manufacturer
Alpha & Omega Semiconductor Inc.Good-Ark SemiconductorInfineon TechnologiesIXYSLittelfuse Inc.Microchip TechnologyonsemiQorvo
Series
-CoolMOS™CoolMOS™ CFD7HEXFET®HiPerFET™TrenchP™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyNot For New DesignsObsolete
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
75 V150 V200 V600 V650 V750 V
Drive Voltage (Max Rds On, Min Rds On)
10V12V15V, 18V
Rds On (Max) @ Id, Vgs
7mOhm @ 82A, 10V10.7mOhm @ 20A, 10V10.7mOhm @ 88A, 10V11.4mOhm @ 70A, 12V11.5mOhm @ 70A, 12V14.2mOhm @ 60A, 12V18mOhm @ 58.2A, 10V20mOhm @ 500mA, 10V28.5mOhm @ 45A, 18V30mOhm @ 60A, 10V35mOhm @ 53A, 10V
Vgs(th) (Max) @ Id
3.5V @ 3.4mA4V @ 250µA4V @ 8mA4.3V @ 15.5mA4.5V @ 2.91mA4.5V @ 250µA5.1V @ 250µA5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V64 nC @ 10 V75 nC @ 15 V164 nC @ 18 V220 nC @ 10 V234 nC @ 10 V308 nC @ 10 V380 nC @ 10 V740 nC @ 10 V
Vgs (Max)
±15V±20V+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
3010 pF @ 75 V3245 pF @ 400 V3340 pF @ 400 V3480 pF @ 325 V4720 pF @ 100 V5310 pF @ 25 V8390 pF @ 25 V9000 pF @ 25 V11659 pF @ 400 V11660 pF @ 400 V73000 pF @ 25 V
FET Feature
-Depletion Mode
Power Dissipation (Max)
200W (Tc)277W (Tc)278W (Tc)340W (Tc)375W (Tc)395W (Tc)446W (Tc)521W (Tc)556W (Tc)600W (Tc)830W (Tc)833W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
D2PAKD2PAK-7MO-229PG-TO247-3PG-TO247-4-3SOT-227BT-MAX™ [B2]TO-247TO-247-4TO-262TO-263 (D2PAK)TO-264 (L)TOLL
Package / Case
8-PowerSFNSOT-227-4, miniBLOCTO-247-3TO-247-3 VariantTO-247-4TO-262-3 Long Leads, I2PAK, TO-262AATO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-8, D2PAK (7 Leads + Tab), TO-263CATO-264-3, TO-264AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-4L
UJ4SC075009K4S
750V/9MOHM, SIC, STACKED CASCODE
Qorvo
558
In Stock
1 : ¥304.75000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
106A (Tc)
12V
11.5mOhm @ 70A, 12V
5.5V @ 10mA
75 nC @ 15 V
±20V
3340 pF @ 400 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
UF3C120080B7S
UJ4SC075009B7S
750V/9MOHM, N-OFF SIC STACK CASC
Qorvo
1,052
In Stock
1 : ¥313.70000
Cut Tape (CT)
800 : ¥208.02900
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
106A (Tc)
12V
11.5mOhm @ 70A, 12V
5.5V @ 10mA
75 nC @ 15 V
±20V
3340 pF @ 400 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3808STRLPBF
MOSFET N-CH 75V 106A D2PAK
Infineon Technologies
2,805
In Stock
1 : ¥24.22000
Cut Tape (CT)
800 : ¥14.64026
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
75 V
106A (Tc)
10V
7mOhm @ 82A, 10V
4V @ 250µA
220 nC @ 10 V
±20V
5310 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SICFET N-CH 750V 106A TOLL
UJ4SC075008L8S
SICFET N-CH 750V 106A TOLL
Qorvo
99
In Stock
1 : ¥414.11000
Cut Tape (CT)
2,000 : ¥195.80553
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
106A (Tc)
12V
11.4mOhm @ 70A, 12V
5.5V @ 10mA
75 nC @ 15 V
±20V
3340 pF @ 400 V
-
600W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TOLL
8-PowerSFN
D2PAK-7
NTBG025N065SC1
SILICON CARBIDE (SIC) MOSFET - 1
onsemi
2,319
In Stock
1 : ¥162.97000
Cut Tape (CT)
800 : ¥112.50383
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
106A (Tc)
15V, 18V
28.5mOhm @ 45A, 18V
4.3V @ 15.5mA
164 nC @ 18 V
+22V, -8V
3480 pF @ 325 V
-
395W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
D2PAK-7
NVBG025N065SC1
SIC MOS D2PAK-7L 650V
onsemi
800
In Stock
1 : ¥218.22000
Cut Tape (CT)
800 : ¥144.74678
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
106A (Tc)
15V, 18V
28.5mOhm @ 45A, 18V
4.3V @ 15.5mA
164 nC @ 18 V
-
3480 pF @ 325 V
-
395W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
MBRB20200CT-1
GSFT10020
MOSFET, N-CH, SINGLE, 106.00A, 2
Good-Ark Semiconductor
1,600
In Stock
1 : ¥27.91000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
106A (Tc)
10V
10.7mOhm @ 88A, 10V
4V @ 250µA
64 nC @ 10 V
±20V
4720 pF @ 100 V
-
278W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GSFA20106
GSFA20106
MOSFET, N-CH, SINGLE, 106.00A, 2
Good-Ark Semiconductor
128
In Stock
1 : ¥36.94000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
106A (Tc)
10V
10.7mOhm @ 88A, 10V
4V @ 250µA
64 nC @ 10 V
±20V
4720 pF @ 100 V
-
340W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247
TO-247-3
T-MAX Pkg
APT106N60B2C6
MOSFET N-CH 600V 106A T-MAX
Microchip Technology
32
In Stock
1 : ¥136.20000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
106A (Tc)
10V
35mOhm @ 53A, 10V
3.5V @ 3.4mA
308 nC @ 10 V
±20V
8390 pF @ 25 V
-
833W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
APT106N60LC6
APT106N60LC6
MOSFET N-CH 600V 106A TO264
Microchip Technology
56
In Stock
1 : ¥172.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
106A (Tc)
10V
35mOhm @ 53A, 10V
3.5V @ 3.4mA
308 nC @ 10 V
±20V
8390 pF @ 25 V
-
833W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264 (L)
TO-264-3, TO-264AA
PG-TO247-3
IPW65R018CFD7XKSA1
650 V COOLMOS CFD7 SUPERJUNCTION
Infineon Technologies
80
In Stock
1 : ¥168.47000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
106A (Tc)
10V
18mOhm @ 58.2A, 10V
4.5V @ 2.91mA
234 nC @ 10 V
±20V
11659 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
IXYK1x0xNxxxx
IXTN120P20T
MOSFET P-CH 200V 106A SOT227B
Littelfuse Inc.
4
In Stock
1 : ¥429.21000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
106A (Tc)
10V
30mOhm @ 60A, 10V
4.5V @ 250µA
740 nC @ 10 V
±15V
73000 pF @ 25 V
-
830W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
0
In Stock
Check Lead Time
1 : ¥176.84000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
106A (Tc)
10V
18mOhm @ 58.2A, 10V
4.5V @ 2.91mA
234 nC @ 10 V
±20V
11660 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-4-3
TO-247-4
750V/10MO,SICFET,G4,TOLL
UJ4SC075010L8S
750V/10MO,SICFET,G4,TOLL
Qorvo
0
In Stock
Check Lead Time
2,000 : ¥158.48542
Bulk
-
Bulk
Active
P-Channel
SiCFET (Silicon Carbide)
750 V
106A (Tc)
12V
14.2mOhm @ 60A, 12V
5.5V @ 10mA
75 nC @ 15 V
±20V
3245 pF @ 400 V
Depletion Mode
556W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
MO-229
8-PowerSFN
IXYK1x0xNxxxx
IXFN106N20
MOSFET N-CH 200V 106A SOT-227B
IXYS
0
In Stock
10 : ¥179.18100
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
200 V
106A (Tc)
10V
20mOhm @ 500mA, 10V
4V @ 8mA
380 nC @ 10 V
±20V
9000 pF @ 25 V
-
521W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
750V/10MO,SICFET,G4,TOLL
UJ4SC075010L8SSR
750V/10MO,SICFET,G4,TOLL
Qorvo
0
In Stock
Check Lead Time
200 : ¥253.04795
Bulk
-
Bulk
Active
P-Channel
SiCFET (Silicon Carbide)
750 V
106A (Tc)
12V
14.2mOhm @ 60A, 12V
5.5V @ 10mA
75 nC @ 15 V
±20V
3245 pF @ 400 V
Depletion Mode
556W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
MO-229
8-PowerSFN
750V/10MO,SICFET,G4,TOLL
UJ4SC075010L8SSB
750V/10MO,SICFET,G4,TOLL
Qorvo
0
In Stock
Check Lead Time
5 : ¥389.43800
Bulk
-
Bulk
Active
P-Channel
SiCFET (Silicon Carbide)
750 V
106A (Tc)
12V
14.2mOhm @ 60A, 12V
5.5V @ 10mA
75 nC @ 15 V
±20V
3245 pF @ 400 V
Depletion Mode
556W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
MO-229
8-PowerSFN
TO-262-3
IRF3808LPBF
MOSFET N-CH 75V 106A TO262
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
75 V
106A (Tc)
10V
7mOhm @ 82A, 10V
4V @ 250µA
220 nC @ 10 V
±20V
5310 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3808SPBF
MOSFET N-CH 75V 106A D2PAK
Infineon Technologies
0
In Stock
Discontinued at Digi-Key
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
75 V
106A (Tc)
10V
7mOhm @ 82A, 10V
4V @ 250µA
220 nC @ 10 V
±20V
5310 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3808STRRPBF
MOSFET N-CH 75V 106A D2PAK
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
75 V
106A (Tc)
10V
7mOhm @ 82A, 10V
4V @ 250µA
220 nC @ 10 V
±20V
5310 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AUIRF3808S
MOSFET N-CH 75V 106A D2PAK
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
75 V
106A (Tc)
10V
7mOhm @ 82A, 10V
4V @ 250µA
220 nC @ 10 V
±20V
5310 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
AOB2502L
MOSFET N-CH 150V 106A TO263
Alpha & Omega Semiconductor Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
150 V
106A (Tc)
10V
10.7mOhm @ 20A, 10V
5.1V @ 250µA
60 nC @ 10 V
±20V
3010 pF @ 75 V
-
277W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 22

106A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.