100mA (Tj) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DN3145N8-G MOSFET N-CH 450V 100MA TO243AA Microchip Technology	87,400 In Stock	1 : ¥7.39000 Cut Tape (CT) 2,000 : ¥5.66486 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	450 V	100mA (Tj)	0V	60Ohm @ 100mA, 0V	-	±20V	120 pF @ 25 V	Depletion Mode	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
VP2450N3-G MOSFET P-CH 500V 100MA TO92-3 Microchip Technology	960 In Stock	1 : ¥16.75000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	500 V	100mA (Tj)	4.5V, 10V	30Ohm @ 100mA, 10V	3.5V @ 1mA	±20V	190 pF @ 25 V	-	740mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
3LP01S-K-TL-E MOSFET P-CH 30V 0.1A SMCP onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	-	-	-	100mA (Tj)	-	-	-	-	-	-	-	150°C (TJ)	Surface Mount	SMCP	TO-236-3, SC-59, SOT-23-3
5HN01C-TB-E MOSFET N-CH 50V 100MA CP3 onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	-	-	-	100mA (Tj)	-	-	-	-	-	-	-	-	Surface Mount	SMCP	TO-236-3, SC-59, SOT-23-3
2SK536-MTK-TB-E MOSFET N-CH 50V 0.1A 3CP onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	-	-	-	100mA (Tj)	10V	-	-	±12V	-	-	-	125°C (TJ)	Surface Mount	3-CP	TO-236-3, SC-59, SOT-23-3
5HN01C-TB-EX MOSFET N-CH 50V 100MA CP3 onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	-	-	-	100mA (Tj)	-	-	-	-	-	-	-	-	-	-	-
5LN01C-TB-EX MOSFET N-CH 50V 100MA 3CP onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	-	-	-	100mA (Tj)	-	-	-	-	-	-	-	-	-	-	-

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.