FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

APTM20DHM16T3G MOSFET 2N-CH 200V 104A SP3 Microsemi Corporation	0 In Stock	100 : ¥440.31660 Bulk	POWER MOS 7®	Bulk	Obsolete	MOSFET (Metal Oxide)	2 N-Channel (Dual) Asymmetrical	-	200V	104A	19mOhm @ 52A, 10V	5V @ 2.5mA	140nC @ 10V	7220pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTM50AM38FTG MOSFET 2N-CH 500V 90A SP4 Microchip Technology	0 In Stock Check Lead Time	8 : ¥1,374.16250 Bulk	POWER MOS 7®	Bulk	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	-	500V	90A	45mOhm @ 45A, 10V	5V @ 5mA	246nC @ 10V	11200pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM100H45SCTG MOSFET 4N-CH 1000V 18A SP4 Microchip Technology	1 In Stock	1 : ¥1,817.71000 Bulk	POWER MOS 7®	Bulk	Active	MOSFET (Metal Oxide)	4 N-Channel (Full Bridge)	-	1000V (1kV)	18A	540mOhm @ 9A, 10V	5V @ 2.5mA	154nC @ 10V	4350pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTM120H29FG MOSFET 4N-CH 1200V 34A SP6 Microchip Technology	0 In Stock Check Lead Time	4 : ¥3,320.27000 Bulk	POWER MOS 7®	Bulk	Active	MOSFET (Metal Oxide)	4 N-Channel (Full Bridge)	-	1200V (1.2kV)	34A	348mOhm @ 17A, 10V	5V @ 5mA	374nC @ 10V	10300pF @ 25V	780W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM100TA35SCTPG MOSFET 6N-CH 1000V 22A SP6-P Microchip Technology	0 In Stock Check Lead Time	3 : ¥3,423.79000 Bulk	POWER MOS 7®	Bulk	Active	MOSFET (Metal Oxide)	6 N-Channel (3-Phase Bridge)	-	1000V (1kV)	22A	420mOhm @ 11A, 10V	5V @ 2.5mA	186nC @ 10V	5200pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	SP6-P

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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.