FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

BSO615NGXUMA1 MOSFET 2N-CH 60V 2.6A 8DSO Infineon Technologies	2,190 In Stock	1 : ¥8.87000 Cut Tape (CT)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT)	Obsolete	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	60V	2.6A	150mOhm @ 2.6A, 4.5V	2V @ 20µA	20nC @ 10V	380pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
BSO615CGXUMA1 MOSFET N/P-CH 60V 3.1A/2A 8DSO Infineon Technologies	1,489 In Stock	2,500 : ¥3.70770 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT)	Obsolete	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	60V	3.1A (Ta), 2A (Ta)	110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V	2V @ 20µA, 2V @ 450µA	22.5nC @ 10V, 20nC @ 10V	380pF @ 25V, 460pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
BSO615CGHUMA1 MOSFET N/P-CH 60V 3.1A/2A 8DSO Infineon Technologies	0 In Stock	Obsolete	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	60V	3.1A, 2A	110mOhm @ 3.1A, 10V	2V @ 20µA	22.5nC @ 10V	380pF @ 25V	2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
BSO615N MOSFET 2N-CH 60V 2.6A 8DSO Infineon Technologies	0 In Stock	Obsolete	SIPMOS®	Tape & Reel (TR)	Obsolete	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	60V	2.6A	150mOhm @ 2.6A, 4.5V	2V @ 20µA	20nC @ 10V	380pF @ 25V	2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
BSO612CV MOSFET N/P-CH 60V 3A/2A 8DSO Infineon Technologies	0 In Stock	Obsolete	SIPMOS®	Tape & Reel (TR)	Obsolete	MOSFET (Metal Oxide)	N and P-Channel	-	60V	3A, 2A	120mOhm @ 3A, 10V	4V @ 20µA	15.5nC @ 10V	340pF @ 25V	2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
BSO215C MOSFET N/P-CH 20V 3.7A 8SO Infineon Technologies	0 In Stock	Obsolete	SIPMOS®	Tape & Reel (TR)	Obsolete	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	20V	3.7A	100mOhm @ 3.7A, 10V	2V @ 10µA	11.5nC @ 10V	246pF @ 25V	2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSO612CVGHUMA1 MOSFET N/P-CH 60V 3A/2A 8DSO Infineon Technologies	0 In Stock	Obsolete	SIPMOS®	Tape & Reel (TR)	Obsolete	MOSFET (Metal Oxide)	N and P-Channel	-	60V	3A, 2A	120mOhm @ 3A, 10V	4V @ 20µA	15.5nC @ 10V	340pF @ 25V	2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
BSO615CT MOSFET N/P-CH 60V 3.1A/2A 8DSO Infineon Technologies	0 In Stock	Obsolete	SIPMOS®	Tape & Reel (TR)	Obsolete	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	60V	3.1A, 2A	110mOhm @ 3.1A, 10V	2V @ 20µA	22.5nC @ 10V	380pF @ 25V	2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
BSO615NGHUMA1 MOSFET 2N-CH 60V 2.6A 8DSO Infineon Technologies	0 In Stock	Obsolete	SIPMOS®	Tape & Reel (TR)	Obsolete	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	60V	2.6A	150mOhm @ 2.6A, 4.5V	2V @ 20µA	20nC @ 10V	380pF @ 25V	2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8

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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.