FET, MOSFET Arrays

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Toshiba Semiconductor and Storage
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)N and P-Channel
Drain to Source Voltage (Vdss)
20V30V
Current - Continuous Drain (Id) @ 25°C
180mA, 100mA6A
Rds On (Max) @ Id, Vgs
14mOhm @ 6A, 10V3Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id
1V @ 1mA2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.2nC @ 10V-
Input Capacitance (Ciss) (Max) @ Vds
9.5pF @ 3V542pF @ 15V
Power - Max
150mW3.1W
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
8-PowerSMD, Flat LeadsSOT-563, SOT-666
Supplier Device Package
8-DFN (3x3)ES6
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
43,644
In Stock
1 : ¥3.20000
Cut Tape (CT)
5,000 : ¥1.28271
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
30V
6A
14mOhm @ 6A, 10V
2.3V @ 250µA
12.2nC @ 10V
542pF @ 15V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (3x3)
SOT-563
SSM6L35FE,LM
MOSFET N/P-CH 20V 0.18A/0.1A ES6
Toshiba Semiconductor and Storage
22,965
In Stock
1 : ¥3.12000
Cut Tape (CT)
4,000 : ¥0.56043
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
N and P-Channel
Logic Level Gate
20V
180mA, 100mA
3Ohm @ 50mA, 4V
1V @ 1mA
-
9.5pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.