Single IGBTs

Results: 9
Series
-BIMOSFET™XPT™
IGBT Type
-NPT
Voltage - Collector Emitter Breakdown (Max)
1700 V2500 V3000 V3600 V
Current - Collector (Ic) (Max)
5 A30 A32 A58 A70 A95 A125 A
Current - Collector Pulsed (Icm)
13 A100 A140 A145 A235 A380 A420 A
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 50A3.2V @ 15V, 12A3.5V @ 15V, 2A3.8V @ 15V, 20A3.9V @ 15V, 19A4V @ 15V, 24A4V @ 15V, 25A4V @ 15V, 40A
Power - Max
32 W160 W250 W500 W660 W937 W1500 W
Switching Energy
3.6mJ (on), 1.76mJ (off)4.9mJ (on), 1.95mJ (off)8.3mJ (on), 7.3mJ (off)11.7mJ (on), 6.9mJ (off)15mJ (on), 30mJ (off)-
Gate Charge
10.6 nC62 nC96 nC142 nC147 nC210 nC270 nC
Td (on/off) @ 25°C
12ns/160ns15ns/230ns16ns/155ns21ns/200ns46ns/205ns-
Test Condition
850V, 24A, 5Ohm, 15V960V, 30A, 15Ohm, 15V960V, 50A, 5Ohm, 15V1250V, 25A, 5Ohm, 15V1250V, 40A, 1Ohm, 15V1500V, 19A, 47Ohm, 15V-
Reverse Recovery Time (trr)
30 ns34 ns170 ns220 ns920 ns1.4 µs1.7 µs
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Package / Case
TO-247-3 VariantTO-247-3TO-268-3, D3PAK (2 Leads + Tab), TO-268AAi4-Pac™-5 (3 Leads)
Supplier Device Package
ISOPLUS i4-PAC™PLUS247™-3TO-247 (IXTH)TO-247 (IXYH)TO-247ADTO-247PLUS-HVTO-268AA
Stocking Options
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Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-247
IXYH24N170C
IGBT 1.7KV 58A TO247-3
IXYS
529
In Stock
1 : ¥111.57000
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-
1700 V
58 A
145 A
3.8V @ 15V, 20A
500 W
4.9mJ (on), 1.95mJ (off)
Standard
96 nC
12ns/160ns
960V, 30A, 15Ohm, 15V
30 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
TO-268
IXBT2N250
IGBT 2500V 5A TO268AA
IXYS
184
In Stock
1 : ¥175.52000
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-
2500 V
5 A
13 A
3.5V @ 15V, 2A
32 W
-
Standard
10.6 nC
-
-
920 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA
TO-247-AD-EP-(H)
IXBH12N300
IGBT 3000V 30A 160W TO247
IXYS
548
In Stock
1 : ¥273.45000
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-
3000 V
30 A
100 A
3.2V @ 15V, 12A
160 W
-
Standard
62 nC
-
-
1.4 µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
TO-247 Plus X
IXYX25N250CV1HV
IGBT 2500V 95A PLUS247-3
IXYS
102
In Stock
1 : ¥372.05000
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2500 V
95 A
235 A
4V @ 15V, 25A
937 W
8.3mJ (on), 7.3mJ (off)
Standard
147 nC
15ns/230ns
1250V, 25A, 5Ohm, 15V
220 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PLUS247™-3
TO 247 HV PLUS EP
IXBX50N360HV
IGBT 3600V 125A TO247PLUS-HV
IXYS
774
In Stock
1 : ¥563.00000
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3600 V
125 A
420 A
2.9V @ 15V, 50A
660 W
-
Standard
210 nC
46ns/205ns
960V, 50A, 5Ohm, 15V
1.7 µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
TO-247PLUS-HV
XPT TO-247(IXYH) Series
IXYH24N170CV1
IGBT 1.7KV 58A TO247
IXYS
300
In Stock
1 : ¥139.64000
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1700 V
58 A
140 A
4V @ 15V, 24A
500 W
3.6mJ (on), 1.76mJ (off)
Standard
96 nC
16ns/155ns
850V, 24A, 5Ohm, 15V
170 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
TO 247 HV PLUS EP
IXYX40N250CHV
IGBT 2.5KV 70A TO247HV
IXYS
0
In Stock
Check Lead Time
1 : ¥426.97000
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2500 V
70 A
380 A
4V @ 15V, 40A
1500 W
11.7mJ (on), 6.9mJ (off)
Standard
270 nC
21ns/200ns
1250V, 40A, 1Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
TO-247PLUS-HV
i4-Pac™-5, 3 leads
IXLF19N250A
IGBT 2500V 32A 250W I4PAC
IXYS
0
In Stock
Check Lead Time
1 : ¥418.27000
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NPT
2500 V
32 A
-
3.9V @ 15V, 19A
250 W
15mJ (on), 30mJ (off)
Standard
142 nC
-
1500V, 19A, 47Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac™-5 (3 Leads)
ISOPLUS i4-PAC™
TO-247
IXYH25N250CHV
IGBT 2500V 235A TO-247HV
IXYS
0
In Stock
Check Lead Time
1 : ¥276.41000
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2500 V
95 A
235 A
4V @ 15V, 25A
937 W
8.3mJ (on), 7.3mJ (off)
Standard
147 nC
15ns/230ns
1250V, 25A, 5Ohm, 15V
34 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.