Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF9510PBF-BE3 MOSFET P-CH 100V 4A TO220AB Vishay Siliconix	3,487 In Stock	1 : ¥8.78000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	4A (Tc)	-	1.2Ohm @ 2.4A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
VP2206N3-G-P003 MOSFET P-CH 60V 640MA TO92-3 Microchip Technology	279 In Stock	1 : ¥21.92000 Cut Tape (CT) 2,000 : ¥16.66613 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	60 V	640mA (Tj)	5V, 10V	900mOhm @ 3.5A, 10V	3.5V @ 10mA	-	±20V	450 pF @ 25 V	-	740mW (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.