Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 68A (Tc)13A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
5.9mOhm @ 23A, 10V9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 120µA4V @ 70µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1140 pF @ 40 V2040 pF @ 40 V
Power Dissipation (Max)
2.7W (Ta), 100W (Tc)3.2W (Ta), 107W (Tc)
Supplier Device Package
8-PQFN (3.3x3.3)8-WDFN (3.3x3.3)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-WDFN
NVTFS6H850NTAG
MOSFET N-CH 80V 11A/68A 8WDFN
onsemi
1,480
In Stock
1 : ¥8.13000
Cut Tape (CT)
1,500 : ¥3.58273
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
11A (Ta), 68A (Tc)
10V
9.5mOhm @ 10A, 10V
4V @ 70µA
19 nC @ 10 V
±20V
1140 pF @ 40 V
-
3.2W (Ta), 107W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
8-WDFN
NTTFS5D9N08HTWG
MOSFET N-CH 80V 13A/84A 8PQFN
onsemi
1,880
In Stock
1 : ¥15.84000
Cut Tape (CT)
3,000 : ¥7.12826
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
13A (Ta), 84A (Tc)
6V, 10V
5.9mOhm @ 23A, 10V
4V @ 120µA
31 nC @ 10 V
±20V
2040 pF @ 40 V
-
2.7W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
8-PQFN (3.3x3.3)
8-PowerWDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.