Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
OptiMOS™ 5U-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V80 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta)300A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 100A, 10V8.9mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
2.1V @ 100µA3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 4.5 V231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1130 pF @ 15 V16250 pF @ 40 V
Power Dissipation (Max)
1.25W (Ta)375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TA)
Supplier Device Package
6-UDFNB (2x2)PG-HDSOP-16-2
Package / Case
6-WDFN Exposed Pad16-PowerSOP Module
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
47,011
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.18674
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
15A (Ta)
4.5V, 10V
8.9mOhm @ 4A, 10V
2.1V @ 100µA
7.5 nC @ 4.5 V
±20V
1130 pF @ 15 V
-
1.25W (Ta)
150°C (TA)
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
IAUS300N08S5N012TATMA1
IAUS300N08S5N012TATMA1
MOSFET N-CH 80V 300A HDSOP-16-2
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥55.58000
Cut Tape (CT)
1,800 : ¥31.53509
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
300A (Tj)
6V, 10V
1.2mOhm @ 100A, 10V
3.8V @ 275µA
231 nC @ 10 V
±20V
16250 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HDSOP-16-2
16-PowerSOP Module
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.