Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes Incorporated
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
8.5A (Ta)24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
11mOhm @ 17A, 10V20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1633 pF @ 15 V1995 pF @ 15 V
Power Dissipation (Max)
950mW (Ta)5W (Ta), 28W (Tc)
Supplier Device Package
8-DFN-EP (3x3)POWERDI3333-8
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
224,526
In Stock
1 : ¥3.94000
Cut Tape (CT)
5,000 : ¥1.84722
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
24A (Tc)
4.5V, 10V
11mOhm @ 17A, 10V
2.3V @ 250µA
50 nC @ 10 V
±25V
1995 pF @ 15 V
-
5W (Ta), 28W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
PowerDI3333-8
DMP3035SFG-7
MOSFET P-CH 30V 8.5A PWRDI3333-8
Diodes Incorporated
0
In Stock
12,000
Factory
Check Lead Time
2,000 : ¥1.47745
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
P-Channel
MOSFET (Metal Oxide)
30 V
8.5A (Ta)
5V, 10V
20mOhm @ 8A, 10V
2.5V @ 250µA
17 nC @ 10 V
±25V
1633 pF @ 15 V
-
950mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.