Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedEPC
Series
-eGaN®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V200 V
Current - Continuous Drain (Id) @ 25°C
470mA (Ta)102A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
3V, 5V5V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 32A, 5V1.8Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id
2V @ 1mA2.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
0.74 nC @ 5 V24 nC @ 5 V
Vgs (Max)
+6V, -4V±12V
Input Capacitance (Ciss) (Max) @ Vds
12.9 pF @ 12 V3195 pF @ 100 V
Power Dissipation (Max)
390mW (Ta)-
Supplier Device Package
7-QFN (3x5)SOT-23-3
Package / Case
7-PowerWQFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN61D8L-7
MOSFET N-CH 60V 470MA SOT23
Diodes Incorporated
30,474
In Stock
267,000
Factory
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥1.11788
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
470mA (Ta)
3V, 5V
1.8Ohm @ 150mA, 5V
2V @ 1mA
0.74 nC @ 5 V
±12V
12.9 pF @ 12 V
-
390mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
EPC2304ENGRT
EPC2304ENGRT
TRANS GAN 200V .005OHM 3X5PQFN
EPC
25,164
In Stock
1 : ¥69.05000
Cut Tape (CT)
3,000 : ¥36.71270
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
102A (Ta)
5V
3.1mOhm @ 32A, 5V
2.5V @ 8mA
24 nC @ 5 V
+6V, -4V
3195 pF @ 100 V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
7-QFN (3x5)
7-PowerWQFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.