Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedInfineon Technologiesonsemi
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
760mA (Ta)1.9A (Ta)7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
11.3mOhm @ 10A, 10V120mOhm @ 4A, 4.5V600mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)1V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3 nC @ 4.5 V5.1 nC @ 10 V38 nC @ 10 V
Vgs (Max)
±12V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
75 pF @ 25 V303 pF @ 15 V1600 pF @ 15 V
Power Dissipation (Max)
540mW (Ta)625mW (Ta)860mW (Ta)
Supplier Device Package
6-PQFN (2x2)Micro3™/SOT-23SOT-23-3
Package / Case
6-PowerWDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML5103TRPBF
MOSFET P-CH 30V 760MA SOT23
Infineon Technologies
71,591
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.77857
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
760mA (Ta)
4.5V, 10V
600mOhm @ 600mA, 10V
1V @ 250µA
5.1 nC @ 10 V
±20V
75 pF @ 25 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
ZXMN2A01FTA
MOSFET N-CH 20V 1.9A SOT23-3
Diodes Incorporated
15,640
In Stock
1,206,000
Factory
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.08998
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.9A (Ta)
2.5V, 4.5V
120mOhm @ 4A, 4.5V
700mV @ 250µA (Min)
3 nC @ 4.5 V
±12V
303 pF @ 15 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
6-UFDFN Exposed Pad
NTLJS17D0P03P8ZTAG
MOSFET P-CH 30V 7A 6PQFN
onsemi
2,252
In Stock
1 : ¥8.54000
Cut Tape (CT)
3,000 : ¥3.52096
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
7A (Ta)
4.5V, 10V
11.3mOhm @ 10A, 10V
3V @ 250µA
38 nC @ 10 V
±25V
1600 pF @ 15 V
-
860mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-PQFN (2x2)
6-PowerWDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.