Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesNexperia USA Inc.Vishay Siliconix
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
55 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)4.3A (Tc)6.6A (Tc)11A (Tc)
Rds On (Max) @ Id, Vgs
175mOhm @ 6.6A, 10V480mOhm @ 3.9A, 10V540mOhm @ 2.6A, 10V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V8.3 nC @ 10 V19 nC @ 10 V27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V180 pF @ 25 V350 pF @ 25 V
Power Dissipation (Max)
260mW (Ta)2.5W (Ta), 25W (Tc)38W (Tc)40W (Tc)
Supplier Device Package
DPAKSOT-323TO-252AA (DPAK)
Package / Case
SC-70, SOT-323TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
Showing
of 4
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IRFR9024NTRPBF
MOSFET P-CH 55V 11A DPAK
Infineon Technologies
22,748
In Stock
1 : ¥7.72000
Cut Tape (CT)
2,000 : ¥3.17624
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
55 V
11A (Tc)
10V
175mOhm @ 6.6A, 10V
4V @ 250µA
19 nC @ 10 V
±20V
350 pF @ 25 V
-
38W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IRFR9120NTRPBF
MOSFET P-CH 100V 6.6A DPAK
Infineon Technologies
30,285
In Stock
1 : ¥8.13000
Cut Tape (CT)
2,000 : ¥3.37499
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
6.6A (Tc)
10V
480mOhm @ 3.9A, 10V
4V @ 250µA
27 nC @ 10 V
±20V
350 pF @ 25 V
-
40W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-323
2N7002PW,115
MOSFET N-CH 60V 310MA SOT323
Nexperia USA Inc.
164,731
In Stock
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.44161
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
10V
1.6Ohm @ 500mA, 10V
2.4V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
260mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
D-PAK (TO-252AA)
IRFR110TRPBF
MOSFET N-CH 100V 4.3A DPAK
Vishay Siliconix
5,570
In Stock
1 : ¥7.88000
Cut Tape (CT)
2,000 : ¥3.26067
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.3A (Tc)
10V
540mOhm @ 2.6A, 10V
4V @ 250µA
8.3 nC @ 10 V
±20V
180 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.