Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

RE1C001ZPTL MOSFET P-CH 20V 100MA EMT3F Rohm Semiconductor	31,768 In Stock	1 : ¥2.30000 Cut Tape (CT) 3,000 : ¥0.38480 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	100mA (Ta)	1.2V, 4.5V	3.8Ohm @ 100mA, 4.5V	1V @ 100µA	-	±10V	15 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
NTA4151PT1G MOSFET P-CH 20V 760MA SC75 onsemi	175,040 In Stock	1 : ¥3.45000 Cut Tape (CT) 3,000 : ¥0.61447 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	760mA (Tj)	1.8V, 4.5V	360mOhm @ 350mA, 4.5V	1.2V @ 250µA	2.1 nC @ 4.5 V	±6V	156 pF @ 5 V	-	301mW (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
SI7454DDP-T1-GE3 MOSFET N-CH 100V 21A PPAK SO-8 Vishay Siliconix	6,479 In Stock	1 : ¥12.31000 Cut Tape (CT) 3,000 : ¥5.09302 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	21A (Tc)	4.5V, 10V	33mOhm @ 10A, 10V	3V @ 250µA	19.5 nC @ 10 V	±20V	550 pF @ 50 V	-	4.1W (Ta), 29.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.