Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V80 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)74A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
7.2mOhm @ 37A, 10V44mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA3.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs
22.4 nC @ 10 V29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1287 pF @ 25 V2100 pF @ 40 V
Power Dissipation (Max)
1.2W (Ta)2.5W (Ta), 69W (Tc)
Supplier Device Package
PG-TDSON-8-7TSOT-26
Package / Case
8-PowerTDFNSOT-23-6 Thin, TSOT-23-6
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
30,424
In Stock
1 : ¥14.45000
Cut Tape (CT)
5,000 : ¥6.26595
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
74A (Tc)
6V, 10V
7.2mOhm @ 37A, 10V
3.8V @ 36µA
29 nC @ 10 V
±20V
2100 pF @ 40 V
-
2.5W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
TSOT-26
DMN6040SVT-7
MOSFET N CH 60V 5A TSOT26
Diodes Incorporated
5,611
In Stock
135,000
Factory
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.45045
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
5A (Ta)
4.5V, 10V
44mOhm @ 4.3A, 10V
3V @ 250µA
22.4 nC @ 10 V
±20V
1287 pF @ 25 V
-
1.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.