Single FETs, MOSFETs

Results: 2
Manufacturer
Littelfuse Inc.Wolfspeed, Inc.
Series
C3M™TrenchP™
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
200 V1200 V
Current - Continuous Drain (Id) @ 25°C
7.2A (Tc)120A (Tc)
Rds On (Max) @ Id, Vgs
30mOhm @ 60A, 10V455mOhm @ 3.6A, 15V
Vgs(th) (Max) @ Id
3.6V @ 1mA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 15 V740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
345 pF @ 1000 V73000 pF @ 25 V
Power Dissipation (Max)
40.8W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PLUS247™-3TO-263-7
Package / Case
TO-247-3 VariantTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247 Plus X
IXTX120P20T
MOSFET P-CH 200V 120A PLUS247-3
Littelfuse Inc.
179
In Stock
1 : ¥247.10000
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Active
P-Channel
MOSFET (Metal Oxide)
200 V
120A (Tc)
-
30mOhm @ 60A, 10V
4.5V @ 250µA
740 nC @ 10 V
-
73000 pF @ 25 V
-
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
C3M0065090J
C3M0350120J
SICFET N-CH 1200V 7.2A TO263-7
Wolfspeed, Inc.
614
In Stock
1 : ¥60.75000
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Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
7.2A (Tc)
15V
455mOhm @ 3.6A, 15V
3.6V @ 1mA
13 nC @ 15 V
+15V, -4V
345 pF @ 1000 V
-
40.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.