Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Series
PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
2.7A (Ta)40A (Tc)
Rds On (Max) @ Id, Vgs
2.15mOhm @ 15A, 10V46mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 5 V77 nC @ 10 V
Vgs (Max)
+20V, -16V±20V
Input Capacitance (Ciss) (Max) @ Vds
480 pF @ 10 V3595 pF @ 15 V
Power Dissipation (Max)
500mW (Ta)3.7W (Ta), 52W (Tc)
Supplier Device Package
PowerPAK® 1212-8SOT-23-3
Package / Case
PowerPAK® 1212-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDN359AN
MOSFET N-CH 30V 2.7A SUPERSOT3
onsemi
32,557
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.30159
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.7A (Ta)
4.5V, 10V
46mOhm @ 2.7A, 10V
3V @ 250µA
7 nC @ 5 V
±20V
480 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PowerPAK 1212-8
SISA04DN-T1-GE3
MOSFET N-CH 30V 40A PPAK1212-8
Vishay Siliconix
32,052
In Stock
1 : ¥9.85000
Cut Tape (CT)
3,000 : ¥4.07467
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
40A (Tc)
4.5V, 10V
2.15mOhm @ 15A, 10V
2.2V @ 250µA
77 nC @ 10 V
+20V, -16V
3595 pF @ 15 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.