Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedEPCVishay Siliconix
Series
-eGaN®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V60 V200 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)35A (Tc)205A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 30A, 10V11.7mOhm @ 15A, 10V100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id
2.3V @ 250µA2.5V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.3 nC @ 5 V130.6 nC @ 10 V135 nC @ 10 V
Vgs (Max)
+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 100 V4370 pF @ 20 V8306 pF @ 30 V
Power Dissipation (Max)
2.7W (Ta), 139W (Tc)3.7W (Ta), 52W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
DiePowerDI5060-8 (Type K)PowerPAK® 1212-8
Package / Case
8-PowerTDFNDiePowerPAK® 1212-8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK 1212-8
SIS443DN-T1-GE3
MOSFET P-CH 40V 35A PPAK 1212-8
Vishay Siliconix
50,521
In Stock
1 : ¥12.56000
Cut Tape (CT)
3,000 : ¥5.20654
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
35A (Tc)
4.5V, 10V
11.7mOhm @ 15A, 10V
2.3V @ 250µA
135 nC @ 10 V
±20V
4370 pF @ 20 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
eGaN Series
EPC2012C
GANFET N-CH 200V 5A DIE OUTLINE
EPC
7,090
In Stock
1 : ¥23.97000
Cut Tape (CT)
2,500 : ¥10.80774
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
5A (Ta)
5V
100mOhm @ 3A, 5V
2.5V @ 1mA
1.3 nC @ 5 V
+6V, -4V
140 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
PowerDI5060-8
DMT61M8SPS-13
MOSFET BVDSS: 41V~60V POWERDI506
Diodes Incorporated
0
In Stock
5,000
Factory
Check Lead Time
2,500 : ¥6.68648
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
205A (Tc)
10V
1.6mOhm @ 30A, 10V
4V @ 250µA
130.6 nC @ 10 V
±20V
8306 pF @ 30 V
-
2.7W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8 (Type K)
8-PowerTDFN
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of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.