Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesToshiba Semiconductor and StorageVishay Siliconix
Series
HEXFET®, StrongIRFET™TrenchFET®U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
400mA (Ta)6.4A (Ta)110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
5.1mOhm @ 65A, 10V19mOhm @ 6.5A, 10V1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA (Min)2.1V @ 250µA3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V70 nC @ 10 V130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V4555 pF @ 25 V
Power Dissipation (Max)
320mW (Ta)1.5W (Ta)160W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-TSSOPPG-TO263-3SOT-23-3
Package / Case
8-TSSOP (0.173", 4.40mm Width)TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
314,312
In Stock
1 : ¥1.31000
Cut Tape (CT)
3,000 : ¥0.21990
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
400mA (Ta)
4.5V, 10V
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
40 pF @ 10 V
-
320mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-TSSOP 8-MSOP
SI6415DQ-T1-GE3
MOSFET P-CH 30V 6.5A 8TSSOP
Vishay Siliconix
6,008
In Stock
1 : ¥14.69000
Cut Tape (CT)
3,000 : ¥6.61657
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
6.4A (Ta)
4.5V, 10V
19mOhm @ 6.5A, 10V
1V @ 250µA (Min)
70 nC @ 10 V
±20V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS7540TRLPBF
MOSFET N-CH 60V 110A D2PAK
Infineon Technologies
190
In Stock
1 : ¥18.31000
Cut Tape (CT)
800 : ¥10.24146
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
110A (Tc)
6V, 10V
5.1mOhm @ 65A, 10V
3.7V @ 100µA
130 nC @ 10 V
±20V
4555 pF @ 25 V
-
160W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.